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Eddy current sensors have been widely used in the field of micro- and nano-measurements. The detection circuit is a key part of eddy current sensors. In particular, the electrical parameters in the signal conversion circuit have an important effect on the measurement performance. It is necessary to study the effect of the electrical parameters on the measurement performance and propose an optimization method. In this study, a simulation model of the eddy current sensor is established by coupling a magnetic field and a circuit field. The circuits include the LC parallel resonance, the AC bridge, and three combination circuits of the LC resonant and AC bridge. The output voltage variation with the thickness of copper film is calculated, and the effect of the electrical parameters on sensitivity Ki is obtained. In the LC parallel resonant circuit, it' is revealed that K1 is maximum when the parallel capacitance CP is equal to the resonant capacitance C0. An optimization method of adjusting resistance RS in different thickness intervals is proposed. In the AC bridge circuit, it' is revealed that there exists an optimal RS, which makes K2 maximum. In three combination circuits, K3, K4, and K5 are the maximum when the capacitances (C1, C2, and C3) reach the resonant capacitance C0. In addition, the sensitivity of each combination circuit is improved compared with that of the AC bridge. The relevant analysis results are further verified by a series of experiments. According to the calculation results and the experimental analysis, the optimization method for electrical parameters is further proposed. [ABSTRACT FROM AUTHOR]

In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules' GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time. [ABSTRACT FROM AUTHOR]

In the copper (Cu) chemical mechanical planarization (CMP) process, accurate determination of a process reaching the end point is of great importance. Based on the eddy current technology, the in situ thickness measurement of the Cu layer is feasible. Previous research studies focus on the application of the eddy current method to the metal layer thickness measurement or endpoint detection. In this paper, an in situ measurement system, which is independently developed by using the eddy current method, is applied to the actual Cu CMP process. A series of experiments are done for further analyzing the dynamic response characteristic of the output signal within different thickness variation ranges. In this study, the voltage difference of the output signal is used to represent the thickness of the Cu layer, and we can extract the voltage difference variations from the output signal fast by using the proposed data processing algorithm. The results show that the voltage difference decreases as thickness decreases in the conventional measurement range and the sensitivity increases at the same time. However, it is also found that there exists a thickness threshold, and the correlation is negative, when the thickness is more than the threshold. Furthermore, it is possible that the in situ measurement system can be used within a larger Cu layer thickness variation range by creating two calibration tables.

Chemical mechanical planarization (CMP) is the most widely used planarization technique in semiconductor manufacturing presently. With the aid of in situ measurement technology, CMP tools can achieve good performance and stable productivity. However, the in situ measurement has remained unexplored from a kinematic standpoint. The available related resources for the kinematic analysis are very limited due to the complexity and technical secret. In this paper, a comprehensive kinematic analysis of in situ measurement is provided, including the analysis model, the measurement trajectory, and the measurement time of each zone of wafer surface during the practical CMP process. In addition, a lot of numerical calculations are performed to study the influences of main parameters on the measurement trajectory and the measurement velocity variation of the probe during the measurement process. All the efforts are expected to improve the in situ measurement system and promote the advancement in CMP control system.