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In this manuscript, the Goos-Hänchen shift of the transmitted and reflected probe beam is controlled and modified. Topologically localized regions are reported in the G-H shift by introducing the position and orbital angular momentum dependency in the Rabi frequencies of the control fields. The system parameters along with the azimuthal quantum number are used to control and modify G-H shift as well as the topological regions. Crater and peak type topological regions are reported in the G-H shift of the reflected as well as transmitted beam. The number of localized regions are reported to strictly follow the general formula 2l2. The maximum shift in the reflected spectrum is reported to be Sr/λ=−140, where as in the transmitted spectrum it is only St/λ=−15. The modified results might have significant applications in optical waveguide switches and sensors.

In this paper, enhanced and tunable Goos-Hänchen (GH) shift of reflected light beam at mid-infrared band can be theoretically achieved by using a multilayer structure where a bulk Dirac semimetal (BDS) layer is coated on a distributed bragg reflector (DBR) separated by a spacer layer. This enhanced GH phenomenon results from the local field enhancement owing to the excitation of Tamm surface plasmons at the interface between BDS layer and spacer layer. Numerical calculation shows that the GH shift can be switched from negative to positive by harnessing the bulk conductivity properties of BDS, and can also be actively tuned through the Fermi energy of BDS or by controlling the structural parameters. These enhanced and tunable GH shifts are promising for fabricating BDS-based infrared shift devices and other applications in nanophotonics.

In this paper, we use the rotating elliptical Gaussian beams (REGBs) to impinge the surfaces coated with cross-anisotropic metasurfaces (CMs) to investigate the Goos–Hänchen (GH) and Imbert–Fedorov (IF) shifts. The effect of the CM coating on the reflection coefficient in this system is considered. In particular, we will show that the angle of incidence and the relative permittivity of the weakly absorbing medium have an influence on the GH and the IF shifts. A comparison with the case of surfaces without the CM is also discussed.

We theoretically investigate the temperature-dependent Goos-Hänchen (GH) shifts in a symmetrical graphene-cladding waveguide (SGCW). The GH shifts in SGCW present a quasi-periodic tendency near the resonance angle with the change of temperature, which can mainly be attributed to the temperature dependence of the guiding layer’s thickness, instead of the graphene intraband conductivity and guiding layer’s refractive index. Importantly, tiny temperature fluctuations can cause significant deviations in GH shifts, and the deviations can be efficiently improved by adjusting the Fermi energy. Therefore, we propose a high-sensitivity temperature sensing scheme based on GH shifts in the SGCW, and the maximum sensitivity can reach up to −2.2 × 105 μm/°C. These researches may open avenues for applications of optical temperature sensors.

Silicene has a rich phase diagram, which is due to the strong spin–orbit coupling induced by the buckled structure. In this work, the Goos-Hänchen (GH) shift of silicene in different phases is investigated. By employing the Kubo model of conductivity of silicene and angular spectrum analysis, the analytical expression of GH shift is obtained. Based on the analytical results, a series of numerical simulations are carried out. The results demonstrate that one can acquire a large negative spatial GH shift at the pseudo-Brewster angle when the silicene is in metal phases. When the silicene is in nonmetallic states, the spatial GH shift become positive. For the angular GH shift, no matter what phase the silicene is in, it varies very rapidly and even changes the sign near the pseudo-Brewster angle. This allow us to manipulate the GH effect by controlling the applied external circularly polarized light electric field or magnetic field. We believe that these results are helpful for developing novel optoelectronic devices that base on the GH effect of silicene.

We investigate the spatial Goos-Hänchen (GH) shift of reflected beam from quasicrystals composed of Fibonacci dielectrics and graphene. The quasicrystals are composed of two symmetrical Fibonacci dielectrics and graphene is embedded in the center of the quasicrystals. The compound structure could induce enhanced band edge states, around which the complex phases of reflection coefficients change dramatically with the light wavelength. Consequently, large spatial GH shifts which may be negative and positive are achieved. Furthermore, the signs of GH shifts may be tuned by the incident wavelength conveniently. This may have potential applications for highly sensitive sensors.

We introduce a theoretical research of the Goos-Hänchen (GH) and Imbert-Fedorov (IF) shifts for the rotating elliptical Gaussian beams (REGBs) incidencing on a weakly absorbing semi-infinite medium. We show that the rotation ellipse parameters a, b and c are related to the occurance of giant spatial GH and IF shifts in the elliptical polarization. A comparison with the IF shift for p-polarization is also discussed. Analytical solutions and numerical simulations almost coincide for the GH and IF shifts.

In this manuscript, the Goos-Hänchen shift of the transmitted and reflected probe beam is controlled and modified. Topologically localized regions are reported in the G-H shift by introducing the position and orbital angular momentum dependency in the Rabi frequencies of the control fields. The system parameters along with the azimuthal quantum number are used to control and modify G-H shift as well as the topological regions. Crater and peak type topological regions are reported in the G-H shift of the reflected as well as transmitted beam. The number of localized regions are reported to strictly follow the general formula 2 l 2 . The maximum shift in the reflected spectrum is reported to be S r / λ = − 140 , where as in the transmitted spectrum it is only S t / λ = − 15. The modified results might have significant applications in optical waveguide switches and sensors. • The Goos-Hänchen shift of probe beam is controlled and modified. • Topologically localized regions are reported in the G-H shift. • The number of localized regions are reported to strictly follow 2 l 2 . [ABSTRACT FROM AUTHOR]

• Enhanced and tunable Goos-Hänchen shift of reflected light based on Tamm surface plasmons in three-dimensional Dirac semimetals, spacer layer and one-dimensional photonic crystal composite multilayer structure. • The Goos-Hänchen shift can be dynamically adjusted by appropriately changing the Fermi energy of BDS or controlling the structural parameters of the composite multilayer structure. • The Goos-Hänchen shift of Tamm surface plasmons in one-dimensional photonic crystal composite structure based on three-dimensional Dirac semimetals provides a new idea for the design of optical shift devices. In this paper, enhanced and tunable Goos-Hänchen (GH) shift of reflected light beam at mid-infrared band can be theoretically achieved by using a multilayer structure where a bulk Dirac semimetal (BDS) layer is coated on a distributed bragg reflector (DBR) separated by a spacer layer. This enhanced GH phenomenon results from the local field enhancement owing to the excitation of Tamm surface plasmons at the interface between BDS layer and spacer layer. Numerical calculation shows that the GH shift can be switched from negative to positive by harnessing the bulk conductivity properties of BDS, and can also be actively tuned through the Fermi energy of BDS or by controlling the structural parameters. These enhanced and tunable GH shifts are promising for fabricating BDS-based infrared shift devices and other applications in nanophotonics. [ABSTRACT FROM AUTHOR]

In this paper, we use the rotating elliptical Gaussian beams (REGBs) to impinge the surfaces coated with cross-anisotropic metasurfaces (CMs) to investigate the Goos–Hänchen (GH) and Imbert–Fedorov (IF) shifts. The effect of the CM coating on the reflection coefficient in this system is considered. In particular, we will show that the angle of incidence and the relative permittivity of the weakly absorbing medium have an influence on the GH and the IF shifts. A comparison with the case of surfaces without the CM is also discussed. • Goos–Hänchen and Imbert–Fedorov shifts of cross-anisotropic metasurfaces (CM) coating system is studied. • The effect of the CM coating on the reflection coefficient in this system is considered. • The angle of incidence and the relative permittivity of the weakly absorbing medium have an influence on these shifts. [ABSTRACT FROM AUTHOR]

• The GH shifts in SGCW present a quasi-periodic tendency with change of temperature. • We propose a high-sensitivity temperature sensing scheme based on GH shifts in SGCW μ. • Our scheme has advantages of high sensitivity, label-free and resisting interference. We theoretically investigate the temperature-dependent Goos-Hänchen (GH) shifts in a symmetrical graphene-cladding waveguide (SGCW). The GH shifts in SGCW present a quasi-periodic tendency near the resonance angle with the change of temperature, which can mainly be attributed to the temperature dependence of the guiding layer's thickness, instead of the graphene intraband conductivity and guiding layer's refractive index. Importantly, tiny temperature fluctuations can cause significant deviations in GH shifts, and the deviations can be efficiently improved by adjusting the Fermi energy. Therefore, we propose a high-sensitivity temperature sensing scheme based on GH shifts in the SGCW, and the maximum sensitivity can reach up to −2.2 × 105 μ m/ ° C. These researches may open avenues for applications of optical temperature sensors. [ABSTRACT FROM AUTHOR]

• We obtain the analytical expressions of GH shift in silicene by employing the method of angular spectrum analysis and boundary conditions. • The spatial GH shift is large and negative at the pseudo-Brewster angle when the silicene is in metal phases. • The angular GH shift varies very rapidly and even changes the sign near the pseudo-Brewster angle. • The GH shift can be manipulated by controlling the external circularly polarized light electric field or magnetic field. Silicene has a rich phase diagram, which is due to the strong spin–orbit coupling induced by the buckled structure. In this work, the Goos-Hänchen (GH) shift of silicene in different phases is investigated. By employing the Kubo model of conductivity of silicene and angular spectrum analysis, the analytical expression of GH shift is obtained. Based on the analytical results, a series of numerical simulations are carried out. The results demonstrate that one can acquire a large negative spatial GH shift at the pseudo-Brewster angle when the silicene is in metal phases. When the silicene is in nonmetallic states, the spatial GH shift become positive. For the angular GH shift, no matter what phase the silicene is in, it varies very rapidly and even changes the sign near the pseudo-Brewster angle. This allow us to manipulate the GH effect by controlling the applied external circularly polarized light electric field or magnetic field. We believe that these results are helpful for developing novel optoelectronic devices that base on the GH effect of silicene. [ABSTRACT FROM AUTHOR]

• Quasicrystals with graphene can enhance the reflection of the band edge states. • Goos-Hänchen shifts could be as high as 104 times of wavelength. • Goos-Hänchen shifts may be tuned by incident wavelength and angle. We investigate the spatial Goos-Hänchen (GH) shift of reflected beam from quasicrystals composed of Fibonacci dielectrics and graphene. The quasicrystals are composed of two symmetrical Fibonacci dielectrics and graphene is embedded in the center of the quasicrystals. The compound structure could induce enhanced band edge states, around which the complex phases of reflection coefficients change dramatically with the light wavelength. Consequently, large spatial GH shifts which may be negative and positive are achieved. Furthermore, the signs of GH shifts may be tuned by the incident wavelength conveniently. This may have potential applications for highly sensitive sensors. [ABSTRACT FROM AUTHOR]

• We show that the rotation ellipse parameters a, b and c are responsible for the appearance of a giant and negative spatial GH and IF shifts in the elliptical polarization. • We can see that there are two giant and opposite spatial IF shifts near the Brewster angle for p -polarized beam. • Analytical solutions and numerical simulations almost coincide for the GH and IF shifts. We introduce a theoretical research of the Goos-Hänchen (GH) and Imbert-Fedorov (IF) shifts for the rotating elliptical Gaussian beams (REGBs) incidencing on a weakly absorbing semi-infinite medium. We show that the rotation ellipse parameters a, b and c are related to the occurance of giant spatial GH and IF shifts in the elliptical polarization. A comparison with the IF shift for p -polarization is also discussed. Analytical solutions and numerical simulations almost coincide for the GH and IF shifts. [ABSTRACT FROM AUTHOR]