1. Phosphorus gettering of iron by screen-printed emitters in monocrystalline Czochralski silicon wafers.
- Author
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Pletzer, Tobias M., Suckow, Stephan, Stegemann, Elmar F. R., Windgassen, Horst, Bätzner, Derk L., and Kurz, Heinrich
- Subjects
SINGLE crystals ,SEMICONDUCTOR wafers ,PHOTOSYNTHETIC oxygen evolution ,OXYGEN evolution reactions ,PHOTOSYNTHESIS - Abstract
ABSTRACT In this paper, we demonstrate single-sided screen-printed emitters in thin monocrystalline Czochralski silicon (Cz-Si) wafers with an improved gettering of iron compared with conventional double-sided POCl
3 emitters. The phosphorus dopant pastes used have to be chosen carefully to provide a sufficiently low emitter sheet resistance and to avoid iron contamination. The iron concentration is determined in a non-destructive way from the minority carrier lifetime obtained by quasi-steady-state photoconductance measurements, down to levels not yet demonstrated for screen-printed emitters. In addition, the well-known metastable boron-oxygen complexes in Cz-Si have been transferred into a stable state by light-induced degradation prior to these measurements. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]- Published
- 2013
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