1. Progress on large area n-type silicon solar cells with front laser doping and a rear emitter.
- Author
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Urueña, Angel, Aleman, Monica, Cornagliotti, Emanuele, Sharma, Aashish, Haslinger, Michael, Tous, Loic, Russell, Richard, John, Joachim, Duerinckx, Filip, and Szlufcik, Jozef
- Subjects
SOLAR cell design ,N-type semiconductors ,ELECTRIC properties of silicon ,ATOMIC layer deposition ,ANNEALING of semiconductors - Abstract
We report on the progress of imec's n-type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al
2 O3 , 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm2 Czochralski-Si. This result has been independently confirmed by ISE CalLab. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]- Published
- 2016
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