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Your search keyword '"Navarro, C. A."' showing total 31 results
Start Over Author "Navarro, C. A." Journal proceedings of spie
31 results on '"Navarro, C. A."'

12. Process highlights to enhance DSA contact patterning performances

Author

Bencher, Christopher, Cheng, Joy Y., Gharbi, A., Tiron, R., Argoud, M., Chamiot-Maitral, G., Fouquet, A., Lapeyre, C., Pimenta Barros, P., Sarrazin, A., Servin, I., Delachat, F., Bos, S., Bérard-Bergery, S., Hazart, J., Chevalier, X., Nicolet, C., Navarro, C., Cayrefourcq, I., Bouanani, S., and Monget, C.

Published
2016
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16. DSA planarization approach to solve pattern density issue

Author

Lin, Qinghuang, Engelmann, Sebastian U., Zhang, Ying, Pimenta Barros, P., Gharbi, A., Sarrazin, A., Tiron, R., Posseme, N., Barnola, S., Bos, S., Tallaron, C., Claveau, G., Chevalier, X., Argoud, M., Servin, I., Navarro, C., Nicolet, C., Lapeyre, C., and Monget, C.

Published
2015
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22. Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process

Author

Chevolleau, T., Cunge, G., Delalande, M., Chevalier, X., Tiron, R., David, S., Darnon, M., and Navarro, C.

Abstract

The best strategy to transfer nanopatterns formed from the self assembly of PS/PMMA bloc copolymers into a silicon substrate is investigated. We show that a hard mask patterning strategy combined with a plasma cure treatment of the PS mask are necessary to reproduce the PS mask pattern into the silicon with a good critical dimension control. In addition, typical silicon etching plasma condition must be revisited to allow the etching of sub-20 nm holes. These results indicate that block copolymer can be readily used as etching masks for advanced CMOS technology.

Published
2012
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23. Pattern density multiplication by direct self assembly of block copolymers: toward 300mm CMOS requirements

Author

Tiron, R., Chevalier, X., Gaugiran, S., Pradelles, J., Fontaine, H., Couderc, C., Pain, L., Navarro, C., Chevolleau, T., Cunge, G., Delalande, M., Fleury, G., and Hadziioannou, G.

Abstract

In this paper we investigate the possibility to reach 300mm CMOS requirements by integrating graphoepitaxy of PS-b-PMMA self-assembly. Different schemes to integrate DSA process by using 193nm dry lithography or e-Beam lithography will be presented. Moreover, several challenges like solvent compatibility, bake kinetics and defectivity will be addressed. Concerning defectivity, we will propose a methodology in order to evaluate and optimize the long range order induced by graphoepitaxy of the block copolymer DSA. This approach affords the monitoring of the overall block copolymer self-assembly process and enables us to easily optimize the parameters required for a long-range order structuration, leading to a near zero-defects block copolymers self-assembled arrays. Transfer capabilities of the PS masks in the bulk silicon substrate by using plasma-etching will be also detailed, both with the film on bare silicon or organized with graphoepitaxy approaches. These results show the high potential of DSA to be integrated directly into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication, at a low cost.

Published
2012
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24. Study and optimization of the parameters governing the block copolymer self-assembly: toward a future integration in lithographic process

Author

Chevalier, X., Tiron, R., Upreti, T., Gaugiran, S., Navarro, C., Magnet, S., Chevolleau, T., Cunges, G., Fleury, G., and Hadziioannou, G.

Abstract

In this paper, we present our studies on polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymer systems to produce cylindrical morphology in the thin film configuration. More specifically, we focus on the different accessible parameters to optimize the processing conditions for the self-assembly of this block copolymer. We studied the self-assembly process of the block copolymer film spin-coated on different random brushes obtained by varying several parameters such as the film thickness, and the annealing time and temperature. We have shown that the thin-film morphology (in-plane, out-of-plane or mixed ones) critically depends on those different parameters and that a subtle optimization of them will provide almost defect-free nanostructures. We also examined the morphology of the self assembled features in the interior of the block copolymer thin film after the subsequent removal of the PMMA block structured domain. This process leads to the film top-nanostructures spanning across the whole film thickness. We evidenced also that high aspect-ratio nanostructures in bulk silicon can be obtained with such optimized films through CMOS-compatible dry-etching approach. To conclude, we show that the above-optimized self assembly parameters can be directly combined with 193nm-resist based patterns through the graphoepitaxy approach to achieve useful features for advanced lithography.

Published
2011
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27. Template affinity role in CH shrink by DSA planarization

Author

Resnick, Douglas J., Bencher, Christopher, Tiron, R., Gharbi, A., Pimenta Barros, P., Bouanani, S., Lapeyre, C., Bos, S., Fouquet, A., Hazart, J., Chevalier, X., Argoud, M., Chamiot-Maitral, G., Barnola, S., Monget, C., Farys, V., Berard-Bergery, S., Perraud, L., Navarro, C., Nicolet, C., Hadziioannou, G., and Fleury, G.

Published
2015
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28. 300mm pilot line DSA contact hole process stability

Author

Resnick, Douglas J., Bencher, Christopher, Argoud, M., Servin, I., Gharbi, A., Pimenta Barros, P., Jullian, K., Sanche, M., Chamiot-Maitral, G., Barnola, S., Tiron, R., Navarro, C., Chevalier, X., Nicolet, C., Fleury, G., Hadziioannou, G., Asai, M., and Pieczulewski, C.

Published
2014
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