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Your search keyword '"Liu, S. J."' showing total 11 results
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11 results on '"Liu, S. J."'

2. LOCNES: A solar telescope to study the stellar activity in the near infrared

Author

Marshall, Heather K., Spyromilio, Jason, Usuda, Tomonori, Claudi, R., Ghedina, A., Pace, E., Di Giorgio, A. M., D'Orazi, V., Gallorini, L., Lanza, A. F., Liu, S. J., Rainer, M., Tozzi, A., Carleo, I., Maldonado Prado, J., Micela, G., Molinari, E., Poretti, E., Phillips, D., Tripodo, G., Cecconi, M., Galli, A., Gonzalez, M. D., Guerra Padilla, V., Guerra Ramón, J. G., Harutyunyan, A., Hernández Cáceres, N., Hernández Díaz, M., Lodi, M., Pérez Ventura, H., Riverol Rodríguez, A. L., Riverol Rodríguez, C. A., and San Juan Gómez, J.

Published
2020
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7. Preliminary surface charging analysis of Ariel payload dielectrics in early transfer orbit and L2-relevant space environment

Author

Coyle, Laura E., Matsuura, Shuji, Perrin, Marshall D., Focardi, M., Michelagnoli, M., Noce, V., Vela Nunez, M., Bolli, P., Nesti, R., Lorenzani, A., Carbonaro, L., Del Vecchio, C., Falcini, G., Tozzi, A., A, Giorgio, Di, Galli, E., Farina, M., Giusi, G., Liu, S. J., Venter, M., Tommasi, E., De Persio, F., Salatti, M., Brienza, D., Piazzolla, R., Morgante, G., Auricchio, N., Pascale, E., Naponiello, L., Redigonda, G., Pace, E., Preti, G., Micela, G., Malaguti, G., Eccleston, P., Caldwell, A., Bishop, G., Desjonqueres, L., and Tinetti, G.

Published
2022
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9. Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

Author

Izyumskaya, N., Liu, S. J., Okur, S., Wu, M., Avrutin, V., Özgür, Ü., Metzner, S., Bertram, F., Christen, J., Zhou, L., Smith, D. J., and Morkoç, H.

Abstract

Non-polar (1-100 ) and semipolar (1-101)GaN layers were grown on (112) and (001) Si substrates, respectively, by metalorganic chemical vapor deposition. In both cases, grooves aligned parallel to the <110> Si direction were formed by anisotropic wet etching to expose vertical {111}Si facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied. It was found that low pressure and low ammonia flow rate are beneficial for m-facet formation, while high ammonia flow rate promotes formation of (1-101) facets. Steady-state and time-resolved photoluminescence measurements revealed that the optical quality of (1-101) oriented GaN is comparable to that of c-plane GaN film grown on sapphire. The nonpolar (1-100 ) GaN shows only weak emission and fast non-radiative recombination rate. The poor optical quality of the mplane GaN can be explained by carbon incorporation during the growth under low pressure. Although further optimization of the growth conditions for better optical quality is required, preliminary results obtained for semipolar (1-101) -oriented GaN are encouraging.

Published
2011
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11. Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

Author

Izyumskaya, N., Liu, S. J., Avrutin, V., Okur, S., Zhang, F., Özgür, Ü., Metzner, S., Karbaum, C., Bertram, F., Christen, J., Smith, D. J., and Morkoç, H.

Abstract

Semipolar (1-101) GaN layers were grown by metal-organic chemical vapor deposition on patterned (001) Si substrates. The effects of reactor pressure and substrate temperature on optical properties of (1-101) GaN were studied by steadystate and time-resolved photoluminescence. The optical measurements revealed that the optical quality of (1-101)- oriented GaN is comparable to that of c-plane GaN film grown on sapphire. Slow decay time constants, representative of the radiative recombination, for semipolar (1-101)GaN grown at 200 Torr are found to be very long (~1.8 ns), comparable to those for the state-of-art c-plane GaN templates grown using in situ epitaxial lateral overgrowth through silicon nitride nano-network. Defect distribution in the GaN stripes was studied by spatially resolved cathodeluminescence measurements. The c+-wing regions of the GaN stripes were found to be dominated by a (D0,X) emission. Only a thin slice of emission around 3.42 eV related to basal stacking faults was revealed in c--wing regions.

Published
2012
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