23 results on '"Chen, Lianhui"'
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2. Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes.
3. High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers.
4. 650-nm AlGaInP quantum well lasers for the application of DVD.
5. High-quality carbon-doped GaAs/AlGaAs material growth in MOCVD and its application for optoelectronic devices.
6. Influence of graded index waveguides on the gain difference between TEO and TMO modes of semiconductor optical amplifiers.
7. Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices.
8. High-temperature operation of 650-nm AlGaInP quantum well laser diodes grown by LP-MOCVD.
9. Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition.
10. High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion.
11. Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs.
12. High-performance 155-m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method.
13. Coupled Alx Ga1-xAs-AlAs distributed Bragg reflectors for high-brightness AlGaInP light-emitting diodes.
14. Semiconductor lasers for construction of information infrastructure in mainland of China.
15. Design and fabrication of 980-nm InGaAs/A1GaAs quantum well lasers with low beam divergence.
16. AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE.
17. High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD.
18. Optoelectronic device research in China.
19. Recent progress on research of materials for optoelectronic device applications in China.
20. Study of single-mode 650-nm AlGaInP quantum well laser diodes for DVD.
21. High-brightness AlGaInP orange light-emitting diodes.
22. Semiconductor lasers in China.
23. 1.3-um and 1.55-um InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence.
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