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The paper presents the method of increasing of the response time of the sensors of different physical magnitudes with the high output resistance, for example, the photodiodes for the optical systems of the digital information transmission. The features of method of the correction circuit of the current-voltage converters, which compensates the influence of the parasitic capacitance of the load on its bandwidth and settling time of the transient process, are considered.

Microwave selective amplifiers (SA) with paraphase output that provide high Q-factor and voltage gain (K0) on quasi-resonance frequency f0 at low parametric sensibility are considered. The results of the mathematical analysis and simulation of SA on 0.25 µm SiGe process are given. Presented SA, along with selective properties has phase splitter feature and allow current control of Q-factor.

Non-classical approach to logical synthesis of multi-valued elements (ME) of computer equipment, based on principles of linear algebra, is considered. Ideology and basic principles of ME building, which are non-similar to traditional one are described.

The possibility of the construction of the voltage references (VR) is considered, the output voltage of which, unlike the majority of the well-known circuitry solutions, can be relatively liberally controlled and be either higher or lower than the band gap of the silicon. For these purposes the differential stage (DS) is used where the voltage power supply with negative temperature drift is connected to one of its inputs. As a result the current with negative temperature drift is formed in one arm of DR and the current with positive temperature drift is formed in another arm. When summing the currents we manage to obtain the temperature stable voltage from 0,2 V up to 3–4V at the temperature drift not worse than 10 ppm/K. Furthermore, the use of p-n-junction FETs with p-type channel in DS renders possible to achieve high radiation hardness at total dose up to 1 Mrad and neutron flux up to 1013 – 1014 n/cm2.

The non-classical (linear) approach to the logic synthesis of k-valued elements of computer engineering is considered. The method and fundamental principles of building of the circuitry basis, different from traditional ones, are described. The new circuit solutions of k-valued logical gates are suggested.

The circuit method of the frequency-response compensation of the input analog section (AS) of the high speed ADCs with the cascade connection of the reference resistors, based on the creation of special conditions for extending of its bandwidth from 200 MHz up to 4÷10 GHz is suggested. The analytical relations for the base block scheme of AS that render possible to calculate the elements of the frequency compensation depending upon the capacitance numerical values of the parasitic capacitors equivalent at the inputs of comparators of ADCs are obtained.

The modified method of the increase of the response speed of flash ADCs with the differential input which renders possible to reduce the effect of the parasitic capacitances of active and passive components of the analog sections and also to optimize their gain flatness is reviewed. The additional emitter follower and balancing capacitor are fed into each analog section to extend the bandwidth of ADC up to 50 GH.

The paper reviews the features of the advanced high-frequency correction circuit for the resistive voltage dividers (attenuators, AT) operating on the capacitive load. The effect of the constant cutoff frequency of considered AT is shown at changing transfer ratio in a wide range. This feature of the considered circuit is the main advantage over the classical AT implementation for the analog-to-digital converters, telecommunication line drivers and other.