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The influence of low temperature (eV to tens-of-eV) electrical resistivity on the onset of the filamentation instability in fast-electron transport is investigated in targets comprising of layers of ordered (diamond) and disordered (vitreous) carbon. It is shown experimentally and numerically that the thickness of the disordered carbon layer influences the degree of filamentation of the fast-electron beam. Strong filamentation is produced if the thickness is of the order of 60 μm or greater, for an electron distribution driven by a sub-picosecond, mid-1020 Wcm−2 laser pulse. It is shown that the position of the vitreous carbon layer relative to the fast-electron source (where the beam current density and background temperature are highest) does not have a strong effect because the resistive filamentation growth rate is high in disordered carbon over a wide range of temperatures up to the Spitzer regime. [ABSTRACT FROM AUTHOR]

The role of low-temperature electrical resistivity in defining the transport properties of mega-Ampere currents of fast (MeV) electrons in solids is investigated using 3D hybrid particle-in-cell (PIC) simulations. By considering resistivity profiles intermediate to the ordered (lattice) and disordered forms of two example materials, lithium and silicon, it is shown that both the magnitude of the resistivity and the shape of the resistivity-temperature profile at low temperatures strongly affect the self-generated resistive magnetic fields and the onset of resistive instabilities, and thus the overall fast electron beam transport pattern. The scaling of these effects to the giga-Ampere electron currents required for the fast ignition scheme for inertial fusion is also explored. [ABSTRACT FROM AUTHOR]