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The optical absorption in a metal-semiconductor metamaterial based on the AlGaAs matrix has been investigated. The key feature of this material is the presence of random arrays of metallic AsSb nanoinclusions modifying its dielectric properties. It has been shown that the presence of such arrays in the material leads to resonance absorption of light by surface plasmons in AsSb nanoinclusions in the incident photon energy range from 1.37 to 1.77 eV. The experimental spectrum of the extinction coefficient at an energy of 1.48 eV exhibits a resonance peak with the half-width equal to 0.18 eV. The extinction coefficient for AsSb nanoinclusions in the AlGaAs matrix has been calculated in terms of the Mie theory. The calculated spectrum of the extinction coefficient also includes a resonance peak with the energy and half-width equal to 1.48 and 0.18 eV, respectively. The calculated plasma energy for free-standing nanoinclusions in vacuum is 7.38 eV.

The effect of exciton-polariton resonance on the optical properties of periodic heterostructures with double InGaN quantum wells in a GaN matrix has been studied. It has been found that the light reflection is amplified at the frequency corresponding to the exciton energy when it coincides with the frequency of the Bragg resonance. This effect is observed to be twice as large as that in a similar system of single quantum wells.

Elastic fields in a system consisting of a surface coherent axisymmetric quantum dot-island on a massive substrate have been theoretically studied using the finite element method. An analysis of the influence of the quantum dot shape (form factor) and relative size (aspect ratio) δ on the accompanying elastic fields has revealed two critical quantum dot dimensions, δc1 and δc2. For δ > δc1, the fields are independent of the quantum dot shape and aspect ratio. At δ ≥ δc2, the quantum dot top remains almost undistorted. Variation of the stress tensor component σzz (z is the quantum dot axis of symmetry) reveals a region of tensile stresses, which is located in the substrate under the quantum dot at a particular distance from the interface. Using an approximate analytical formula for the radial component of displacements, model electron microscopy images have been calculated for quantum dot islands with δ > δc1 in the InSb/InAs system. The possibility of stress relaxation occurring in the system via the formation of a prismatic interstitial dislocation loop has been considered.

The optical reflectance spectra of resonant Bragg quantum-well structures are studied theoretically. The existence of two special frequencies in the spectra at which the reflectance depends only weakly on the number of quantum wells in the structure is explained analytically. The effect of nonradiative exciton damping on the reflectance spectra in the vicinity of the special frequencies is analyzed. It is shown that the inclusion of the dielectric contrast leads to the appearance of a third special frequency, at which the contributions to the reflectance due to the dielectric contrast and exciton resonance completely cancel each other.

The elastic behavior of a spherical inclusion with a uniaxial dilatation is considered. As an example, the experimental data on stressed nanoclusters in doped semiconductors (As-Sb clusters in GaAs) are presented. The fields of displacements, elastic strains, and stresses are determined for spherical inclusions with uniaxial dilatation, and the specific features of these fields are revealed. The elastic energy of a uniaxial spheroid is calculated and compared with that for a triaxial spheroid. The relaxation mechanisms for the elastic field of the inclusion associated with the formation of prismatic dislocation loops are considered.