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Based on a composite magnetic–electric-barrier nanostructure, a spin spatial splitter was proposed recently. In order to control the spin-polarized lateral displacement (LD) of electrons, a tunable δ-potential is introduced into this device by the atomic layer doping technique. Theoretical analysis together with numerical simulation shows that both magnitude and sign of spin-polarized LD change dramatically with the height and/or the position of the δ-doping. Consequently, a structurally tunable spin spatial splitter can be achieved for spintronics applications.

We theoretically investigate how to manipulate spin-dependent Goos–Hanchen (GH) shifts by an applied bias in a realistic magnetic-barrier nanostructure, which is experimentally created by depositing a ferromagnetic stripe with perpendicular magnetization on the top of heterostructure. GH shifts of transmitted electron beams are calculated numerically with the help of the stationary phase method. It is shown that both magnitude and sign of spin polarization in GH shifts are closely relative to the applied bias, which can give rise to a bias-controllable spin beam splitter.