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Spin-orbit interactions which couple the spin of a particle with its momentum degrees of freedom lie at the center of spintronic applications. Of special interest in semiconductor physics are Rashba and Dresselhaus spin-orbit coupling. When equal in strength, the Rashba and Dresselhaus fields result in SU(2) spin rotation symmetry and emergence of the persistent spin helix only investigated for charge carriers in semiconductor quantum wells. Recently, a synthetic Rashba-Dresselhaus Hamiltonian was shown to describe cavity photons confined in a microcavity filled with optically anisotropic liquid crystal. In this Letter, we present a purely optical realization of two types of spin patterns corresponding to the persistent spin helix and the Stern-Gerlach experiment in such a cavity. We show how the symmetry of the Hamiltonian results in spatial oscillations of the spin orientation of photons traveling in the plane of the cavity.

We report on the occurrence of strong interlayer Dzyaloshinskii-Moriya interaction (DMI) between an in-plane magnetized Co layer and a perpendicularly magnetized TbFe layer through a Pt spacer. The DMI causes a chiral coupling that favors one-handed orthogonal magnetic configurations of Co and TbFe, which we reveal through Hall effect and magnetoresistance measurements. The DMI coupling mediated by Pt causes effective magnetic fields on either layer of up to 10-15 mT, which decrease monotonically with increasing Pt thickness. Ru, Ta, and Ti spacers mediate a significantly smaller coupling compared to Pt, highlighting the essential role of Pt in inducing the interlayer DMI. These results are relevant to understand and maximize the interlayer coupling induced by the DMI as well as to design spintronic devices with chiral spin textures. ISSN:0031-9007 ISSN:1079-7114

Skyrmion transport fundamentally determines the speed, energy consumption, and functionality of skyrmion-based spintronic devices, attracting considerable attention. Recent experimental studies found there is a migration barrier for the thermal activated transport of a skyrmion, which is speculated to be induced by the pinning effects of crystalline defects. In this Letter, we propose an alternative source of migration barrier for skyrmion transport, i.e., a local lattice distortion field due to spin-lattice coupling, which can lead to the same Arrhenius diffusion behavior in defect-free skyrmion materials. By performing spin-lattice dynamics simulations, we study the microdynamic insight into the influence of local lattice distortion field, which refreshes the mechanistic understanding on skyrmion transport.

Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch wave function in the linear-response regime. Beyond the linear regime, nonlinear spin-charge conversion in the higher-order electric field terms has recently been demonstrated in noncentrosymmetric materials with nontrivial spin texture in the momentum space. Here, we report the observation of the nonlinear charge-spin conversion in a nominally centrosymmetric oxide material ${\mathrm{SrIrO}}_{3}$ by breaking inversion symmetry at the interface. A large second-order magnetoelectric coefficient is observed at room temperature because of the antisymmetric spin-orbit interaction at the interface of Dirac semimetallic bands, which is subject to the symmetry constraint of the substrates. Our study suggests that nonlinear spin-charge conversion can be induced in many materials with strong spin-orbit interaction at the interface by breaking the local inversion symmetry to give rise to spin splitting in otherwise spin degenerate systems.

Little is known about the spin-flip diffusion length $l_{\rm sf}$, one of the most important material parameters in the field of spintronics. We use a density-functional-theory based scattering approach to determine values of $l_{\rm sf}$ that result from electron-phonon scattering as a function of temperature for all 5d transition metal elements. $l_{\rm sf}$ does not decrease monotonically with the atomic number Z but is found to be inversely proportional to the density of states at the Fermi level. By using the same local current methodology to calculate the spin Hall angle $\Theta_{\rm sH}$ that characterizes the efficiency of the spin Hall effect, we show that the products $\rho(T)l_{\rm sf}(T)$ and $\Theta_{\rm sH}(T)l_{\rm sf}(T)$ are constant., Comment: Accepted for publication in Physical Review Letters

The spin polarization in nonmagnetic materials is conventionally attributed to the outcome of spin-orbit coupling when the global inversion symmetry is broken. The recently discovered hidden spin polarization indicates that a specific atomic site asymmetry could also induce measurable spin polarization, leading to a paradigm shift in research on centrosymmetric crystals for potential spintronic applications. Here, combining spin- and angle-resolved photoemission spectroscopy and theoretical calculations, we report distinct spin-momentum-layer locking phenomena in a centrosymmetric, layered material, BiOI. The measured spin is highly polarized along the Brillouin zone boundary, while the same effect almost vanishes around the zone center due to its nonsymmorphic crystal structure. Our work demonstrates the existence of momentum-dependent hidden spin polarization and uncovers the microscopic mechanism of spin, momentum, and layer locking to each other, thus shedding light on the design metrics for future spintronic materials.

Zero-bias conductance peaks (ZBCPs) can manifest a number of notable physical phenomena and thus provide critical characteristics to the underlying electronic systems. Here, we report observations of pronounced ZBCPs in hybrid junctions composed of an oxide heterostructure LaAlO_{3}/SrTiO_{3} and an elemental superconductor Nb, where the two-dimensional electron system (2DES) at the LaAlO_{3}/SrTiO_{3} interface is known to accommodate gate-tunable Rashba spin-orbit coupling (SOC). Remarkably, the ZBCPs exhibit a domelike dependence on the gate voltage, which correlates strongly with the nonmonotonic gate dependence of the Rashba SOC in the 2DES. The origin of the observed ZBCPs can be attributed to the reflectionless tunneling effect of electrons that undergo phase-coherent multiple Andreev reflection, and their gate dependence can be explained by the enhanced quantum coherence time of electrons in the 2DES with increased momentum separation due to SOC. We further demonstrate theoretically that, in the presence of a substantial proximity effect, the Rashba SOC can directly enhance the overall Andreev conductance in the 2DES-barrier-superconductor junctions. These findings not only highlight nontrivial interplay between electron spin and superconductivity revealed by ZBCPs, but also set forward the study of superconducting hybrid structures by means of controllable SOC, which has significant implications in various research fronts from superconducting spintronics to topological superconductivity.

The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic states in 2D materials provide unique control knobs to manipulate spin precession. Here, by manipulating the anisotropic spin-orbit coupling in bilayer graphene by the proximity effect to WSe$_2$, we achieve coherent spin precession in the absence of an external magnetic field, even in the diffusive regime. Remarkably, the sign of the precessing spin polarization can be tuned by a back gate voltage and by a drift current. Our realization of a spin field-effect transistor at room temperature is a cornerstone for the implementation of energy-efficient spin-based logic., 7 pages, 4 figures

The recent discovery of intrinsic ferromagnetism in two-dimensional (2D) van der Waals (vdW) crystals has opened up a new arena for spintronics, raising an opportunity of achieving tunable intrinsic 2D vdW magnetism. Here, we show that the magnetization and the magnetic anisotropy energy (MAE) of few-layered Fe3GeTe2(FGT) is strongly modulated by a femtosecond laser pulse. Upon increasing the femtosecond laser excitation intensity, the saturation magnetization increases in an approximately linear way and the coercivity determined by the MAE decreases monotonically, showing unambiguously the effect of the laser pulse on magnetic ordering. This effect observed at room temperature reveals the emergence of light-driven room-temperature (300 K) ferromagnetism in 2D vdW FGT, as its intrinsic Curie temperature TC is ~200K. The light-tunable ferromagnetism is attributed to the changes in the electronic structure due to the optical doping effect. Our findings pave a novel way to optically tune 2D vdW magnetism and enhance the TC up to room temperature, promoting spintronic applications at or above room temperature.

Memory or transistor devices based on an electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit an electron's valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to 1 by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon, which is akin to Bloch spin ferromagnetism, arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, twofold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment.

Chiral spin textures stabilized by the interfacial Dzyaloshinkii-Moriya interaction, such as skyrmions and homochiral domain walls, have been shown to exhibit qualities that make them attractive for their incorporation in a variety of spintronic devices. However, for thicker multilayer films, mixed textures occur in which an achiral Bloch component coexists with a chiral Néel component of the domain wall to reduce the demagnetization field at the film surface. We show that an interlayer Dzyaloshinkii-Moriya interaction can break the degeneracy between Bloch chiralities. We further find large population asymmetries and chiral branching in the Bloch component of the domain walls in well-ordered Co/Pd multilayers. This asymmetry is a result of the combined effect of the demagnetization field and an interlayer Dzyaloshinkii-Moriya interaction, and is strongly related to film thickness and structural ordering. This work paves the way toward the utilization of this effect toward controlling Bloch chirality in magnetic multilayers.

The electrons in 2D systems with broken inversion symmetry are spin-polarized due to spin-orbit coupling and provide perfect targets for observing exotic spin-related fundamental phenomena. We observe a Fermi surface with a novel spin texture in the 2D metallic system formed by indium double layers on Si(111) and find that the primary origin of the spin-polarized electronic states of this system is the orbital angular momentum and not the so-called Rashba effect. The present results deepen the understanding of the physics arising from spin-orbit coupling in atomic-layered materials with consequences for spintronic devices and the physics of the superconducting state.

The spontaneous order of electric and magnetic dipoles in ferroelectrics and ferromagnets even at high temperatures is both fascinating and useful. Transport of magnetism in the form of spin currents is vigorously studied in spintronics, but the polarization current of the ferroelectric order has escaped attention. We therefore present a time-dependent diffusion theory for heat and polarization transport in a planar ferroelectric capacitor with parameters derived from a one-dimensional phonon model. We predict steady-state Seebeck and transient Peltier effects that await experimental discovery.

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe_{3}GeTe_{2} (FGT) can be largely modulated by a protonic gate. With the increase of the protons intercalated among vdW layers, interlayer magnetic coupling increases. Because of the existence of antiferromagnetic layers in FGT nanoflakes, the increasing interlayer magnetic coupling induces exchange bias in protonated FGT nanoflakes. Most strikingly, a rarely seen zero-field cooled (ZFC) exchange bias with very large values (maximally up to 1.2 kOe) has been observed when higher positive voltages (V_{g}≥4.36 V) are applied to the protonic gate, which clearly demonstrates that a strong interlayer coupling is realized by proton intercalation. Such strong interlayer coupling will enable a wider range of applications for vdW magnets.

We theoretically investigate the dynamics of magnetic hedgehogs, which are three-dimensional topological spin textures that exist in common magnets, focusing on their transport properties and connections to spintronics. We show that fictitious magnetic monopoles carried by hedgehog textures obey a topological conservation law, based on which a hydrodynamic theory is developed. We propose a nonlocal transport measurement in the disordered phase, where the conservation of the hedgehog flow results in a nonlocal signal decaying inversely proportional to the distance. The bulk-edge correspondence between hedgehog number and skyrmion number, the fictitious electric charges arising from magnetic dynamics, and the analogy between bound states of hedgehogs in ordered phase and the quark confinement in quantum chromodynamics are also discussed. Our study points to a practical potential in utilizing hedgehog flows for long-range neutral signal propagation or manipulation of skyrmion textures in three-dimensional magnetic materials., Comment: 10 pages including the supplemental material, 3 figures, PRL Editors' Suggestions

We analyze a quantum-classical hybrid system of steadily precessing around the fixed axis slow classical localized magnetic moments (LMMs), forming a head-to-head domain wall, surrounded by fast electrons driven out of equilibrium by LMMs and residing within a metallic wire whose connection to macroscopic reservoirs makes electronic quantum system an open one. The model captures the essence of dynamical noncollinear magnetic textures encountered in spintronics, while making it possible to obtain the exact time-dependent nonequilibrium density matrix of electronic systems and split it into four contributions. The Fermi surface contribution generates dissipative (or dampinglike in spintronics terminology) spin torque on LMMs, as the counterpart of electronic friction in nonadiabatic molecular dynamics (MD). Among two Fermi sea contributions, one generates geometric torque dominating in the adiabatic regime, which remains as the only nonzero contribution in a closed system with disconnected reservoirs. Locally geometric torque can have nondissipative (or fieldlike in spintronics terminology) component, acting as the counterpart of geometric magnetism force in nonadiabatic MD, as well as a much smaller dampinglike component acting as "geometric friction." Such current-independent geometric torque is absent from widely used micromagnetics or atomistic spin dynamics modeling of magnetization dynamics based on the Landau-Lifshitz-Gilbert equation, while previous analyses of how to include our Fermi-surface dampinglike torque have severely underestimated its total magnitude.

Controlling magnetism by electric fields offers a highly attractive perspective for designing future generations of energy-efficient information technologies. Here, we demonstrate that the magnitude of current-induced spin-orbit torques in thin perpendicularly magnetized CoFeB films can be tuned and even increased by electric-field generated piezoelectric strain. Using theoretical calculations, we uncover that the subtle interplay of spin-orbit coupling, crystal symmetry, and orbital polarization is at the core of the observed strain dependence of spin-orbit torques. Our results open a path to integrating two energy efficient spin manipulation approaches, the electric-field-induced strain and the current-induced magnetization switching, thereby enabling novel device concepts.

We generalize the spin drift-diffusion formalism by considering spin-orbit interaction of a ferromagnet, which generates transverse spin currents in the ferromagnet. We consider quantum-mechanical transport of transverse spins in a spin-orbit coupled ferromagnet and develop a generalized drift-diffusion equation and boundary condition. By combining them, we identify previously unrecognized spin transport phenomena in heterostructures including ferromagnets. As representative examples, we show self-generated spin torque and self-generated charge pumping in ferromagnet-normal metal bilayers. The former is a torque exerting on a ferromagnet, originating from a transverse spin current leaving from the ferromagnet itself, whereas the latter is the Onsager reciprocity of the former. Our work not only provides a concise formalism for the effects of nondephased transverse spins in ferromagnets but also enables to design spintronic devices without an external spin source.

Interfacial magnetic anisotropy in magnetic insulators has been largely unexplored. Recently, interface-induced skyrmions and electrical control of magnetization have been discovered in insulator-based heterostructures, which demand a thorough understanding of interfacial interactions in these materials. We observe a substantial, tunable interfacial magnetic anisotropy between Tm_{3}Fe_{5}O_{12} epitaxial thin films and fifteen nonmagnetic materials spanning a significant portion of the periodic table, which we attribute to Rashba spin-orbit coupling. Our results show a clear distinction between nonmagnetic capping layers from the d block and the p block. This work offers a new path for controlling magnetic phases in magnetic insulators for low-loss spintronic applications.

We articulate confocal microscopy and electron spin resonance to implement spin-to-charge conversion in a small ensemble of nitrogen-vacancy (NV) centers in bulk diamond and demonstrate charge conversion of neighboring defects conditional on the NV spin state. We build on this observation to show time-resolved NV spin manipulation and ancilla-charge-aided NV spin state detection via integrated measurements. Our results hint at intriguing opportunities in the development of novel measurement strategies in fundamental science and quantum spintronics as well as in the search for enhanced forms of color-center-based metrology down to the limit of individual point defects.

Magnetic hopfion is a three-dimensional (3D) topological soliton with novel spin structure that would enable exotic dynamics. Here, we study the current-driven 3D dynamics of a magnetic hopfion with a unit Hopf index in a frustrated magnet. Attributed to the spin Berry phase and symmetry of the hopfion, the phase space entangles multiple collective coordinates, thus the hopfion exhibits rich dynamics including longitudinal motion along the current direction, transverse motion perpendicular to the current direction, rotational motion, and dilation. Furthermore, the characteristics of hopfion dynamics is determined by the ratio between the nonadiabatic spin transfer torque parameter and the damping parameter. Such peculiar 3D dynamics of magnetic hopfion could shed light on understanding the universal physics of hopfions in different systems and boost the prosperous development of 3D spintronics.

Antiferromagnetic (AFM) spintronics exploits the N\'eel vector as a state variable for novel spintronic devices. Recent studies have shown that the field-like and antidamping spin-orbit torques (SOT) can be used to switch the N\'eel vector in antiferromagnets with proper symmetries. However, the precise detection of the N\'eel vector remains a challenging problem. In this letter, we predict that the nonlinear anomalous Hall effect (AHE) can be used to detect the N\'eel vector in most compensated antiferromagnets supporting the antidamping SOT. We show that the magnetic crystal group symmetry of these antiferromagnets combined with spin-orbit coupling produce a sizable Berry curvature dipole and hence the nonlinear AHE. As a specific example, we consider half-Heusler alloy CuMnSb, which N\'eel vector can be switched by the antidamping SOT. Based on density functional theory calculations, we show that the nonlinear AHE in CuMnSb results in a measurable Hall voltage under conventional experimental conditions. The strong dependence of the Berry curvature dipole on the N\'eel vector orientation provides a new detection scheme of the N\'eel vector based on the nonlinear AHE. Our predictions enrich the material platform for studying non-trivial phenomena associated with the Berry curvature and broaden the range of materials useful for AFM spintronics.

The recent demonstration of topological states in antiferromagnets (AFMs) provides an exciting platform for exploring prominent physical phenomena and applications of antiferromagnetic spintronics. A famous example is the AFM topological insulator (TI) state, which, however, was still not observed in two dimensions. Using a tight-binding model and first-principles calculations, we show that, in contrast to previously observed AFM topological insulators in three dimensions, an AFM TI can emerge in two dimensions as a result of a nonsymmorphic symmetry that combines the twofold rotation symmetry and half-lattice translation. Based on the spin Chern number, Wannier charge centers, and gapless edge states analysis, we identify intrinsic AFM $X\mathrm{Mn}Y$ ($X=\mathrm{Sr}$ and Ba, $Y=\mathrm{Sn}$ and Pb) quintuple layers as experimentally feasible examples of predicted topological states with a stable crystal structure and giant magnitude of the nontrivial band gaps, reaching as much as 186 meV for SrMnPb, thereby promoting these systems as promising candidates for innovative spintronics applications.