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We theoretically demonstrate that screw dislocation (SD), a 1D topological defect widely present in semiconductors, exhibits ubiquitously a new form of spin-orbit coupling (SOC) effect. Differing from the widely known conventional 2D Rashba-Dresselhaus (RD) SOC effect that typically exists at surfaces or interfaces, the deep-level nature of SD-SOC states in semiconductors readily makes it an ideal SOC. Remarkably, the spin texture of 1D SD-SOC, pertaining to the inherent symmetry of SD, exhibits a significantly higher degree of spin coherency than the 2D RD-SOC. Moreover, the 1D SD-SOC can be tuned by ionicity in compound semiconductors to ideally suppress spin relaxation, as demonstrated by comparative first-principles calculations of SDs in Si/Ge, GaAs, and SiC. Our findings therefore open a new door to manipulating spin transport in semiconductors by taking advantage of an otherwise detrimental topological defect.

It is demonstrated, using reflectance difference spectroscopy, scanning tunneling microscopy, and low-energy electron diffraction, combined with deliberate straining of the surface, that the presence of atomic steps dramatically changes the optical anisotropy of the Si(001) surface. The step-induced reflectance difference signal originates predominately from rebonded steps and is comparable in magnitude to that of the terrace signal.

The evolution of the plasmon spectrum of the Si(111) (7×7)-Cs surface has been studied by energy loss spectroscopy individually resolved in energy and momentum during the transition from substrate to Cs overlayer metallization. The multipole plasmon is identified by an extremely narrow angular distribution of the inelastic electron scattering, unaccounted for by standard dipole scattering theory. A crossover between multipole and monopole surface plasmon is observed at finite surface wave vectors q∥, depending on Cs coverage, and reveals a high sensitivity of the short-wavelength multipole components on surface morphology. © 2006 The American Physical Society.

We show in a combined study of four-point conductance measurement and tunneling microscopy that surface state conductance induced by one monolayer of Pb on Si(557) can be quasi one dimensional with conductivity values close to typical three-dimensional metals. At a critical temperature of Tc=78K, associated with an order-disorder phase transition and a tenfold superperiodicity along the Pb chains, the system switches from low to high conductance anisotropy, with a semiconductor-insulator transition in the direction perpendicular to the chain structure, while along the chains conductance with a (1/T+const) temperature dependence was found. © 2005 The American Physical Society.