1. Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells
- Author
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Martin Wagner, Stephan Winnerl, Gottfried Strasser, Harald Schneider, Dominik Stehr, S. Schartner, Manfred Helm, and Aaron Maxwell Andrews
- Subjects
Physics ,Autler–Townes effect ,Field (physics) ,Condensed matter physics ,Condensed Matter::Other ,business.industry ,Terahertz radiation ,Exciton ,General Physics and Astronomy ,Semiconductor ,Atomic physics ,business ,Beam (structure) ,Quantum well ,Energy (signal processing) - Abstract
The near-infrared transmission of a semiconductor multiple quantum well is probed under intense terahertz illumination. We observe clear evidence of the intraexcitonic Autler-Townes effect when the terahertz beam is tuned near the $1s\mathrm{\text{\ensuremath{-}}}2p$ transition of the heavy-hole exciton. The strongly coupled effective two-level system has been driven with terahertz field strengths of up to $10\text{ }\text{ }\mathrm{kV}/\mathrm{cm}$ resulting in a Rabi energy of $\ensuremath{\approx}0.6$ times the transition energy. The induced near-infrared spectral changes at low intensities are qualitatively explained using a basic two-level model.
- Published
- 2010