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Potassium-40 is a widespread, naturally occurring isotope whose radioactivity impacts subatomic rare-event searches, nuclear structure theory, and estimated geological ages. A predicted electron-capture decay directly to the ground state of argon-40 has never been observed. The KDK (potassium decay) collaboration reports strong evidence of this rare decay mode. A blinded analysis reveals a nonzero ratio of intensities of ground-state electron-captures (I_{EC^{0}}) over excited-state ones (I_{EC^{*}}) of I_{EC^{0}}/I_{EC^{*}}=0.0095±[over stat]0.0022±[over sys]0.0010 (68% C.L.), with the null hypothesis rejected at 4σ. In terms of branching ratio, this signal yields I_{EC^{0}}=0.098%±[over stat]0.023%±[over sys]0.010%, roughly half of the commonly used prediction, with consequences for various fields [27L. Hariasz et al., companion paper, Phys. Rev. C 108, 014327 (2023)PRVCAN2469-998510.1103/PhysRevC.108.014327].

Two-dimensional materials such as layered transition-metal dichalcogenides (TMDs) are ideal platforms for studying defect behaviors, an essential step towards defect engineering for novel material functions. Here, we image the 3D lattice locations of selenium-vacancy V_{Se} defects and manipulate them using a scanning tunneling microscope (STM) near the surface of PdSe_{2}, a recently discovered pentagonal layered TMD. The V_{Se} show a characterisitc charging ring in a spatially resolved conductance map, based on which we can determine its subsurface lattice location precisely. Using the STM tip, not only can we reversibly switch the defect states between charge neutral and charge negative, but also trigger migrations of V_{Se} defects. This allows a demonstration of direct "writing" and "erasing" of atomic defects and tracing the diffusion pathways. First-principles calculations reveal a small diffusion barrier of V_{Se} in PdSe_{2}, which is much lower than S vacancy in MoS_{2} or an O vacancy in TiO_{2}. This finding opens an opportunity of defect engineering in PdSe_{2} for such as controlled phase transformations and resistive-switching memory device application.

We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La(0.7)Sr(0.3)MnO(3) thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. The ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials' functional properties.

A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

The crystal and magnetic structures of single-crystalline hexagonal LuFeO(3) films have been studied using x-ray, electron, and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal LuFeO(3) films are room-temperature multiferroics.

Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to ∼300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

Using in situ magneto-optical Kerr effect measurements and phenomenological modeling, we study the tunability in both the magnetization anisotropy and magnetic coupling of Fe nanodots on a curved Cu(111) substrate with varying vicinity. We observe that, as the terrace width w decreases, the magnetization anisotropy increases monotonically, faster when w is smaller than the nanodot size d. In contrast, the magnetic coupling strength also increases until w approximately d, after which it decreases steeply. These striking observations can be rationalized by invoking the counterintuitive dimensionality variation of the surface electrons mediating the interdot coupling: the electrons are confined to be one dimensional (1D) when w > or = d, but become quasi-2D when w < d due to enhanced electron spillover across the steps bridged by the nanodots.

We studied the surface structure of La&#95;{5/8}Ca&#95;{3/8}MnO&#95;{3}(001) thin films using in situ scanning tunneling microscopy (STM). Atomically resolved STM images reveal that a (sqrt[2]xsqrt[2])R45;{ degrees } reconstructed surface and a (1x1) surface can be converted back and forth through adsorption and desorption of oxygen at the surface. The electrical properties of the surfaces are investigated by scanning tunneling spectroscopy. I-V curves clearly show that the presence of an oxygen overlayer renders the surface insulating while the (1x1) surface without the oxygen overlayer is metallic.

We report a surprising observation that the growth of the [Fe(1 ML)/Co(1 ML)](n) superlattice of L1(0) structure on Cu(100) is stable only up to six atomic layers (n=3), which cannot be rationalized by stress arguments. Instead, first-principles calculations reveal a transition from the L1(0) to the B2 structure due to the effect of dimensionality on the stability of the electronic structure of the superlattice. Whereas the majority-spin electrons are energetically insensitive to the layer thickness, the minority-spin electrons induce the transition at n=3.

The self-assembly of iron dots on the insulating surface of NaCl(001) is investigated experimentally and theoretically. Under proper growth conditions, nanometer-scale magnetic iron dots with remarkably narrow size distributions can be achieved in the absence of a wetting layer. Furthermore, both the vertical and lateral sizes of the dots can be tuned with the iron dosage without introducing apparent size broadening, even though the clustering is clearly in the strong coarsening regime. These observations are interpreted using a phenomenological mean-field theory, in which a coverage-dependent optimal dot size is selected by strain-mediated dot-dot interactions.