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The ac magnetoconductance of bulk InSb at THz frequencies in high magnetic fields, as measured by the transmission of THz radiation, shows a field-induced transmission, which at high temperatures ($\ensuremath{\approx}100\text{ }\text{ }\mathrm{K}$) is well explained with classical magnetoplasma effects (helicon waves). However, at low temperatures (4 K), the transmitted radiation intensity shows magnetoquantum oscillations that represent the Shubnikov--de Haas effect at THz frequencies. At frequencies above 0.9 THz, when the radiation period is shorter than the Drude scattering time, an anomalously high transmission is observed in the magnetic quantum limit that can be interpreted as carrier localization at high frequencies.

The spectrum of the nu(5) cis-bending vibration of ground state (X(2)Pi(u)) C(2)H(2)(+) has been recorded applying the method of laser induced reactions in a low-temperature 22-pole ion trap. It is obtained by counting the number of products of the reaction C(2)H(2)(+) (v(5) = 1) + H(2)--> C(2)H(3)(+) + H as a function of the laser wavelength. The vibronic transitions Delta-Pi and Sigma-Pi with their corresponding spin-orbit and Renner-Teller substructure have been observed. Using a perturbative analysis, the vibrational frequency has been determined to omega(5) = (710 +/- 4) cm(-1) and the Renner-Teller parameter epsilon(5) is on the order of 3 x 10(-2).

We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps.

Electro-optic detection of the Coulomb field of a relativistic electron bunch combined with single-shot cross correlation of optical pulses is used to enable single-shot measurements of the shape and length of femtosecond electron bunches. This method overcomes a fundamental time-resolution limit of previous single-shot electro-optic measurements, which arises from the inseparability of time and frequency properties of the probing optical pulse. Using this new technique we have made real-time measurements of a 50 MeV electron bunch, observing the profile of 650 fs FWHM ($\ensuremath{\sim}275\text{ }\text{ }\mathrm{f}\mathrm{s}$ rms) long bunches.