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Coherent phonons are an excellent tool to investigate the interplay between electronic and structural dynamics. The displacive excitation of coherent phonons in elemental bismuth is one of the most widely studied processes for this purpose. We employ time-resolved photoelectron diffraction to access the structural dynamics by recording the photoemission intensity from one initial state as a function of emission angle. In comparison with tight-binding and single-scattering cluster calculations, this allows electronic and structural effects to be disentangled. Hence, the full dynamics of the hot electron gas and of coherently excited phonons can be accessed in a single experiment. As a major result the phase lag between the coherent phonons and the modulation of the electronic structure can be determined with high precision. The phonon phase lag with respect to the modulation of the electronic structure is about 2.85±0.21 rad, thus significantly smaller than π. The difference is not due to phonon decay by energy dissipation into low-energy modes, but rather caused by the very early evolution of the highly excited electron distribution. [ABSTRACT FROM AUTHOR]

The surface segregation profile of an intermetallic compound becomes vertically and laterally modulated upon epitaxial growth of a single-layer hexagonal boron nitride (h-BN) nanomesh. h-BN on PtRh(111) forms an 11-on-10 superhoneycomb, such as that on Rh(111) [Corso et al., Science 303, 217 (2004)], though with a smaller lattice constant of 2.73 nm. X-ray photoelectron diffraction shows that the h-BN layer reduces the Pt enrichment of the first layer by promoting site swapping of about 10 Pt-Rh pairs within the 10?10 unit cell between the first and second layers. This segregation profile is confirmed by density-functional-theory-based cluster-expansion calculations. Generally, a strong modulation of the h-BN bonding strength and a higher affinity to one of the constituents leads to self-assembly of top layer patches underneath the nanomesh pores. [ABSTRACT FROM AUTHOR]