1. Possible origin of the nonmonotonic doping dependence of the in-plane resistivity anisotropy of Ba(Fe1−xTx)2As2(T=Co, Ni and Cu)
- Author
-
Leo Yu, Kristiaan De Greve, Scott Riggs, James Analytis, Peter L. McMahon, Ian R. Fisher, Jiun-Haw Chu, Yoshihisa Yamamoto, and Hsueh-Hui Kuo
- Subjects
Range (particle radiation) ,Materials science ,Condensed matter physics ,Doping ,Isotropy ,Fermi surface ,02 engineering and technology ,Conductivity ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Electrical resistivity and conductivity ,Hall effect ,0103 physical sciences ,Condensed Matter::Strongly Correlated Electrons ,010306 general physics ,0210 nano-technology ,Anisotropy - Abstract
The in-plane resistivity anisotropy has been measured for detwinned single crystals of Ba(Fe1−xNix)2As2 and Ba(Fe1−xCux)2As2. The data reveal a nonmonotonic doping dependence, similar to previous observations for Ba(Fe1−xCox)2As2. Magnetotransport measurements of the parent compound reveal a nonlinear Hall coefficient and a large linear term in the transverse magnetoresistance. Both effects are rapidly suppressed with chemical substitution over a similar compositional range as the onset of the large in-plane resistivity anisotropy. This suggests that the relatively small in-plane anisotropy of the parent compound in the spin-density wave state is due to the presence of an isotropic, high mobility pocket of the reconstructed Fermi surface. Progressive suppression of the contribution to the conductivity arising from this isotropic pocket with chemical substitution eventually reveals the underlying in-plane anisotropy associated with the remaining Fermi surface pockets.
- Published
- 2011
- Full Text
- View/download PDF