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Experimental investigation on the temperature dependence of the maximum Josephson current (dc) has been performed on both symmetrical and asymmetrical junctions. Agreement with the Ambegaokar and Baratoff calculations has been found for both $\mathrm{Sn}\ensuremath{-}{\mathrm{Sn}}_{x}{\mathrm{O}}_{y}\ensuremath{-}\mathrm{Sn}$ and $\mathrm{Sn}\ensuremath{-}{\mathrm{Sn}}_{x}{\mathrm{O}}_{y}\ensuremath{-}\mathrm{Pb}$ junctions. Experimental results on $\mathrm{Sn}\ensuremath{-}{\mathrm{Sn}}_{x}{\mathrm{O}}_{y}\ensuremath{-}\mathrm{In}$ structures have also been obtained.

The temperature dependence of the light-induced dc Josephson current in asymmetric (Pb-CdS-In) and symmetric (In-CdS-In) tunnel junctions has been measured. A rather simple theoretical model, in the framework of the proximity effect, has been adopted. A reasonable agreement with the experimental data has been found giving a consistent picture of the whole behavior of such light-sensitive structures.