27 results on '"Fafard S"'
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2. Single-exciton energy shell structure in InAs/GaAs quantum dots
3. Ground-state emission from a singleInAs∕GaAsself-assembled quantum dot structure in ultrahigh magnetic fields
4. Energy relaxation of electrons inInAs∕GaAsquantum dot molecules
5. Temperature dependence of the excitonic band gap inInxGa1−xAs∕GaAsself-assembled quantum dots
6. Exciton lifetime inInAs∕GaAsquantum dot molecules
7. Correlated photon-pair emission from a charged single quantum dot
8. Fine structure in the excitonic emission ofInAs∕GaAsquantum dot molecules
9. Temperature dependence of the zero-phonon linewidth inInAs∕GaAsquantum dots
10. Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots
11. Optical spectroscopy of a singleAl0.36In0.64As/Al0.33Ga0.67Asquantum dot
12. Experimental determination of Auger capture coefficients in self-assembled quantum dots
13. Manipulating the energy levels of semiconductor quantum dots
14. Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy
15. Asymmetric Stark shift inAlxIn1−xAs/AlyGa1−yAsself-assembled dots
16. Tunable intersublevel transitions in self-forming semiconductor quantum dots
17. Structural and radiative evolution in quantum dots near theInxGa1−xAs/GaAsStranski-Krastanow transformation
18. State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots
19. Magnetoluminescence studies ofInyAl1−yAs self-assembled quantum dots inAlxGa1−xAs matrices
20. Photocarrier recombination inAlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots
21. Visible photoluminescence fromN-dot ensembles and the linewidth of ultrasmallAlyIn1−yAs/AlxGa1−xAs quantum dots
22. Bound states of near-surface multiple-quantum-well structures: Evolution of the Tamm states with the cap-layer thickness
23. Excitation-intensity-dependent photoluminescence quenching due to electric-field screening by photocarriers captured in single-quantum-well structures
24. Miniband formation in asymmetric double-quantum-well superlattice structures
25. Effects of an electric field on the continuum energy levels inInxGa1−xAs/GaAs quantum wells terminated with thin cap layers
26. Energy levels in quantum wells with capping barrier layer of finite size: Bound states and oscillatory behavior of the continuum states
27. Oscillatory behavior of the continuum states inInxGa1−xAs/GaAs quantum wells due to capping-barrier layers of finite size
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