34 results on '"Dunstan, D"'
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2. Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials
3. Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101 , 125421 (2020)]
4. Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers
5. Effect of humidity on the interlayer interaction of bilayer graphene
6. Graphite under uniaxial compression along thecaxis: A parameter to relate out-of-plane strain to in-plane phonon frequency
7. Pressure coefficients of Raman modes of carbon nanotubes resolved by chirality: Environmental effect on graphene sheet
8. HIGH-PRESSURE INVESTIGATION OF GASB AND GA1-XINXSB/GASB QUANTUM-WELLS
9. Reply to “Comment on ‘Reappraisal of experimental values of third-order elastic constants of some cubic semiconductors and metals’ ”
10. Nanoscale pressure effects in individual double-wall carbon nanotubes
11. Reappraisal of experimental values of third-order elastic constants of some cubic semiconductors and metals
12. Raman scattering in hexagonal InN under high pressure
13. Harmonic and anharmonic components of third-order elastic constants
14. Photoluminescence of (111)InxGa1−xAs/GaAsstrained-layer quantum wells under hydrostatic pressure
15. Theory of the anomalously low band-gap pressure coefficients in strained-layer semiconductor alloys
16. Pressure dependence of the direct band gap in tetrahedral semiconductors
17. Pressure dependence of the photoluminescence of strained (001) and (111)InxGa1−xAs quantum wells
18. Exciton formation and hole-spin relaxation in intrinsic quantum wells
19. Strain and interdiffusion in semiconductor heterostructures
20. Thermal quenching and retrapping effects in the photoluminescence ofInyGa1−yAs/GaAs/AlxGa1−xAs multiple-quantum-well structures
21. Evidence of type-I band offsets in strainedGaAs1−xSbx/GaAs quantum wells from high-pressure photoluminescence
22. Photoreflectance and piezophotoreflectance studies of strained-layerInxGa1−xAs-GaAs quantum wells
23. Influence of the spin-orbit split-off valence band inInxGa1−xAs/AlyGa1−yAs strained-layer quantum wells
24. Phase transitions in CdTe/ZnTe strained-layer superlattices
25. High-pressure investigation of GaSb andGa1−xInxSb/GaSb quantum wells
26. Hydrostatic pressure coefficients of the photoluminescence ofInxGa1−xAs/GaAs strained-layer quantum wells
27. Photoluminescence in hydrogenated amorphous silicon
28. Phonon interactions in the tail states ofa-Si:H
29. Electronic structure of cadmium-telluride–zinc-telluride strained-layer superlattices under pressure
30. Comment on nonradiative-recombination kinetics ina−Si:H
31. Pressure dependence of the valence-band discontinuity in GaAs/AlAs and GaAs/AlxGa1−xAs quantum-well structures
32. New model of the temperature dependence of the 1.4-eV emission band of amorphous silicon
33. Hydrostatic and uniaxial pressure coefficients of CdTe
34. Comparison of analytic and Monte Carlo results in distant-pair recombination
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