75 results on '"Capizzi M"'
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2. Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities
3. Identification of four-hydrogen complexes in In-rich InxGa1−xN (x>0.4) alloys using photoluminescence, x-ray absorption, and density functional theory
4. Band-gap profiling by laser writing of hydrogen-containing III-N-Vs
5. Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs1−yNyalloys: Role of N-Hncenters withn>2and their thermal stability
6. Giant and reversible enhancement of the electrical resistance of GaAs1−xNxby hydrogen irradiation
7. Compositional evolution of Bi-induced acceptor states in GaAs1−xBixalloy
8. Quantum confinement effects in hydrogen-intercalatedGa1−xAsxNx-GaAs1−xNx:Hplanar heterostructures investigated by photoluminescence spectroscopy
9. Compositional dependence of the exciton reduced mass inGaAs1−xBix(x=0–10%)
10. Detailed structure of the H-N-H center inGaAsyN1−yrevealed by vibrational spectroscopy under uniaxial stress
11. Hydrogen diffusion inGaAs1−xNx
12. Carrier mass measurements in degenerate indium nitride
13. Local structure of nitrogen-hydrogen complexes in dilute nitrides
14. Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots
15. Role of strain and properties of N clusters at the onset of the alloy limit inGaAs1−xNx
16. Experimental evidence of different hydrogen donors inn-type InN
17. Vibrational properties of the H-N-H complex in dilute III-N-V alloys: Infrared spectroscopy and density functional theory
18. Influence of nitrogen-cluster states on the gyromagnetic factor of electrons inGaAs1−xNx
19. Nitrogen-induced perturbation of the valence band states inGaP1−xNxalloys
20. Compositional disorder inGaAs1−xNx:Hinvestigated by photoluminescence
21. Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements inGaAs1−xNx
22. Effects of hydrogenation on the local structure ofInxGa1−xAs1−yNyquantum wells andGaAs1−yNyepilayers
23. Nitrogen-hydrogen complex inGaAsxN1−xrevealed by x-ray absorption spectroscopy
24. Free carrier and/or exciton trapping by nitrogen pairs in diluteGaP1−xNx
25. Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties ofGaNxP1−xalloys: A proof for a general property of dilute nitrides
26. Vibrational spectroscopy of hydrogenatedGaAs1−yNy: A structure-sensitive test of anH2*(N)model
27. Tunable variation of the electron effective mass and exciton radius in hydrogenatedGaAs1−xNx
28. Lattice relaxation by atomic hydrogen irradiation ofIII−N−Vsemiconductor alloys
29. Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures
30. Nitrogen passivation induced by atomic hydrogen: TheGaP1−yNycase
31. Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation
32. Role of N clusters inInxGa1−xAs1−yNyband-gap reduction
33. Hydrogen-induced passivation of nitrogen inGaAs1−yNy
34. Reduced temperature dependence of the band gap inGaAs1−yNyinvestigated with photoluminescence
35. Quantum size and shape effects on the excited states ofInxGa1−xAsquantum dots
36. Effect of nitrogen on the temperature dependence of the energy gap inInxGa1−xAs1−yNy/GaAssingle quantum wells
37. Effect of hydrogen on the electronic properties ofInxGa1−xAs1−yNy/GaAsquantum wells
38. Evidence of two species of carriers from the far-infrared reflectivity ofBi2Sr2CuO6
39. Optical evidence of polaron interaction in InAs/GaAs quantum dots
40. Competition between radiative decay and energy relaxation of carriers in disorderedInxGa1−xAs/GaAsquantum wells
41. Structure, kinetics, and vibrational properties of complexes formed by hydrogen and gallium vacancies in GaAs: A theoretical study
42. Phase diagram of a two-dimensional liquid inGaAs/AlxGa1−xAsbiased double quantum wells
43. Carrier thermal escape and retrapping in self-assembled quantum dots
44. Charged excitonic complexes inGaAs/Al0.35Ga0.65Asp-i-ndouble quantum wells
45. Optical spectroscopy of quasimonolayer InAs at the onset of quantum-dot nucleation
46. Optical properties of InAs quantum dots: Common trends
47. Comment on “Optical properties ofNd1.85Ce0.15CuO4”
48. Fano effect in thea−bplane ofNd1.96Ce0.04CuO4+y:Evidence of phonon interaction with a polaronic background
49. Competition effects in the carrier capture intoInxGa1−xAs/GaAsdouble-quantum-well structures
50. Formation and relaxation of exciton-carbon acceptor complexes in GaAs
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