1. Tuning the electronic properties of LaAlO3 / SrTiO3 interfaces by irradiating the LaAlO3 surface with low-energy cluster ion beams
- Author
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Jackie Vigneron, Bruno Berini, Karl Ridier, Niels Keller, Arnaud Etcheberry, Yves Dumont, Arnaud Fouchet, Damien Aureau, and Bernadette Domengès
- Subjects
Ion beam ,Heterojunction ,02 engineering and technology ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,01 natural sciences ,Molecular physics ,Ion ,X-ray photoelectron spectroscopy ,Electrical resistivity and conductivity ,0103 physical sciences ,Irradiation ,Atomic physics ,010306 general physics ,0210 nano-technology ,Surface states - Abstract
We have investigated the effects of low-energy ion beam irradiations using argon clusters on the chemical and electronic properties of LaAlO3/SrTiO3 (LAO/STO) heterointerfaces by combining x-ray photoelectron spectroscopy (XPS) and electrical transport measurements. Due to its unique features, we demonstrate that a short-time cluster ion irradiation of the LAO surface induces significant modifications in the chemical properties of the buried STO substrate with (1) a lowering of Ti atoms oxidation states (from Ti4+ to Ti3+ and Ti2+) correlated to the formation of oxygen vacancies at the LAO surface and (2) the creation of new surface states for Sr atoms. Contrary to what is generally observed by using higher energy ion beam techniques, this leads to an increase of the electrical conductivity at the LAO/STO interface. Our XPS data clearly reveal the existence of dynamical processes on the titanium and strontium atoms, which compete with the effect of the cluster ion beam irradiation. These relaxation effects are in part attributed to the diffusion of the ion-induced oxygen vacancies in the entire heterostructure since an increase of the interfacial metallicity is also evidenced far from the irradiated area. This paper highlights the possibility of tuning the electrical properties of LAO/STO interfaces by surface engineering, confirming experimentally the intimate connection between LAO chemistry and electronic properties of LAO/STO interfaces.
- Published
- 2018
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