Search

The introduction of selective area growth (SAG) in a mature semi‐insulating buried heterostructure (SIBH) platform for the realization of photonic integrated circuits on monolithic InP has been demonstrated. A thorough determination of the relations between quantum well thickness, transition energies, and mask geometries is performed on dedicated wafers by means of extensive micro‐X‐Ray diffraction and microphotoluminescence measurements. Based on those results, SAG is used to grow, with a single epitaxy step, AlGaInAs multiple quantum wells heterostructures, to tailor the active regions of Fabry–Pérot and distributed feedback (DFB) lasers emitting in the O‐Band. SIBH DFB lasers are realized, exhibiting threshold currents < 7.2 mA (at 25 °C), and emitting over 100‐nm spectral range in the O‐Band. [ABSTRACT FROM AUTHOR]

Multijunction solar cells based on III–V compounds are one of the most effective possibilities to achieve high efficiencies for space and terrestrial applications. In this work, AlInAs:C/InP:S tunnel junctions are fabricated using MOVPE. Type‐II interface band alignment of AlInAs/InP heterostructure is ideal for increasing the photogenerated carriers tunneling. Furthermore, wide bandgaps ensure a high transmission of the incident light. The J–V characteristics of the final devices show very good results in terms of tunneling peak current density (1000 A cm−2) and specific resistance at low applied bias, making them compatible for photovoltaic applications. [ABSTRACT FROM AUTHOR]

Monolithic photonic integrated circuits (PIC) transmitters using the prefixed optical phase switching concept for BPSK modulation format have been shown promising at 1.55 μm band. These devices could also be crucial for short reach connections and access networks. With this aim, we are studying basic quantum well designs for a laser and an electro-absorption modulator switch to be integrated by selective area growth into PICs at 1.3 μm. Photocurrent measurements and band offset modeling have been performed to determine the MQW stack well-fitted for this application. Broad area laser measurements have also been checked on these structures to verify the material lasing properties. A 6 nm thick well with low barrier seems to be the best trade-off between absorption and shift for 1.3 μm EAM and it also gives good lasing properties. [ABSTRACT FROM AUTHOR]

Hybrid integration of III–V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform (SPP). Epitaxial regrowth of III–V materials on InP thin seed layer bonded to an oxidized silicon wafer has shown its potential to extend the III–V mature multiregrowth technologies into the SPP. In the approach, an epitaxial InP layer grown on a 4 in. InP wafer is directly bonded onto a SiO2/Si 200 mm wafer. After InP substrate removal, the new template (InPoSi) is evaluated for epitaxial regrowth: an eight periods strain‐compensated AlGaInAs multiquantum wells (MQW) heterostructure surrounded by two InP cladding layers is grown by metal‐organic vapor phase epitaxy (MOVPE) simultaneously on the InPoSi substrate and on an InP substrate as a reference. For the first time, in situ reflectance and curvature measurements are carried out on InPoSi, enabling the assessment of surface roughness and thermal strain of the III–V materials during growth. High material quality is obtained as attested by X‐ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy. [ABSTRACT FROM AUTHOR]