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Michael Kneissl, TU Berlin (Germany) Jürgen Christen, University of Magdeburg (Germany) B Conference Chairs b Axel Hoffmann, TU Berlin (Germany) Bo Monemar, Linköping University (Sweden) B Honorary Chairs b Tim Wernicke, TU Berlin (Germany) B Conference Secretary b Ulrich Schwarz, TU Chemnitz (Germany) B Local Chair b Åsa Haglund, Chalmers University of Technology (Sweden) Matteo Meneghini, University of Padova (Italy) B Guest Editors and Publication Chairs b Two tutorial speakers (Andreas Waag, TU Braunschweig) and Chris Van de Walle (UCSB) opened the workshop, by discussing GaN-based micro-LEDs and point defects, respectively. The workshop organizers express their gratitude to the plenary and invited speakers, rump session chairs, panelists, and short-course presenters for their exceptional contributions to an engaging workshop. [Extracted from the article]

Compared with GaN-based visible GaN/InGaN multiple-quantum-well laser diodes (LDs), near-ultraviolet LDs may suffer from a sever hole leakage due to the shallower quantum wells (QWs). Here, a 10 nm n-type AlGaN hole blocking layer (HBL) is proposed to put before the first quantum barrier layer and form a barrier on the valence band to prevent injected holes from leaking into the n-type region. Furthermore, the effect of Al composition of Al xGa1− xN HBL on LD performance is studied. Theoretical analysis is performed by using advanced device simulation. The simulation results show that lower threshold current and higher output power of LD can be obtained when Al composition of Al xGa1− xN HBL is 0.23. This result can be attributed to a dramatically reduced electron and hole leakage, and more stimulated recombination in QWs. [ABSTRACT FROM AUTHOR]