1. Improvement in thermoelectric performance of In6Se7 by substitution of Sn for In.
- Author
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Cheng, Min, Chen, Shaoping, Du, Zhengliang, Liu, Xianglian, and Cui, Jiaolin
- Subjects
THERMOELECTRICITY ,THERMOELECTRIC materials ,ELECTRIC conductivity ,TIN alloys ,INDIUM alloys ,ANTISITE defects - Abstract
In this work we have observed a remarkable improvement in the thermoelectric (TE) performance of In
6- x Snx Se7 ( ZT = ∼0.28 at x = 0.1, 833 K) compared to that of pristine In6 Se7 ( ZT = 0.015 at 640 K). This improvement is mainly attributed to the creation of active donor defects SnIn 3+ as Sn(4+) is energetically favorable to In+ sites. Although Sn (2+), which generates a defect SnIn − as an acceptor when it is incorporated into the In3+ sites, has a negative effect on the transport properties, the counter effect from Sn(4+) and Sn(2+) suggests that In6 Se7 -based alloys are prospectively good thermoelectric candidates if their chemical compositions are well optimized. [ABSTRACT FROM AUTHOR]- Published
- 2016
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