1. Electron microscopy of InGaN nanopillars spontaneously grown on Si(111) substrates
- Author
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Wolfgang Neumann, Alexandros Georgakilas, I. Kerasiotis, G. P. Dimitrakopulos, Ines Häusler, A. P. Vajpeyi, Th. Kehagias, and Ph. Komnninou
- Subjects
Materials science ,Nanostructure ,business.industry ,chemistry.chemical_element ,Condensed Matter Physics ,Microstructure ,Crystallographic defect ,Crystal ,Crystallography ,chemistry ,Transmission electron microscopy ,Optoelectronics ,business ,Indium ,Nanopillar ,Molecular beam epitaxy - Abstract
The mopholological, structural and chemical properties of InxGa1–xN nanopillars directly grown on Si (111) substrates, by molecular beam epitaxy, were investigated employing transmission electron microscopy related techniques. Single crystalline, single phase nanopillars were observed exhibiting a low density of crystal defects, which contribute to good crystal quality. Initial nanostructures merge through subgrain boundaries to form final nanopillars. Energy dispersive X-ray analysis revealed a very low InN mole fraction near the interface with the substrate, owing to high desorption rates from the elevated growth temperature, and gradually higher In incorporation rates near the tips of the nanopillars. This compositional fluctuation is maintained due to poor segregation of indium adatoms along the c-axis of the nanopillars towards the Si interface. A second species of long and narrow nanopillars was found In-free. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2010