1. Resonant tunnelling via two impurity levels in a vertical tunnelling nanostructure
- Author
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A. K. Savchenko, F. Laruelle, M. V. Entin, A. S. Mayorov, E. Bedel, and Giancarlo Faini
- Subjects
Nanostructure ,Condensed matter physics ,Chemistry ,Impurity ,Condensed Matter::Superconductivity ,Conductance ,Current (fluid) ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Quantum tunnelling ,Magnetic field ,Diode - Abstract
Resonant tunnelling through two impurities has been observed in a vertical double-barrier GaAs/AlGaAs tunnelling diode. It manifests itself as a peak in the I-V characteristic near the conductance threshold. Analysis of the position of the current peak, its shape and the shift in magnetic field parallel to the current provides information about the characteristics of the two impurities. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Published
- 2007
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