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We demonstrate a new thin film transistor (TFT) architecture that allows expansion of the device width using continuous fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.5× increase in 'ON' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar 'OFF' current value, ∼100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers an interesting opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

As shown by Hanna et al. (pp. 248–251), by gENerating a wavy architecture in classical transistor topology, high output currENt is achieved – opENing up bold futuristic opportunity for ultra ‐ high resolution bright display. Irrespective of the material choice – the unique architecture can provide exciting thin film transistor performance ENhancemENt.Hanna et al. demonstrate the advantage of using the wavy architecture in terms of area efficiENcy, higher output currENt, higher field ‐ effect mobility and similar OFF currENt levels and Ion/Ioff ratios compared to the planar counterparts for a thin film transistor fabricated with zinc oxide channel material. The low OFF currENt levels and high Ion/Ioff ratios for the wavy ‐ channel devices ENsure that standby power consumption remains similar to the planar counterparts, while improving the ON currENt values. This proves the significance of this new architecture for large ‐ area high ‐ resolution display applications. [ABSTRACT FROM AUTHOR]