21 results on '"Jansen, R. A."'
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2. Dependence of InN properties on MOCVD growth parameters
3. In situ SiN passivation of AlInN/GaN heterostructures by MOVPE
4. Quaternary nitride heterostructure field effect transistors
5. Epitaxy and characterisation of AlInGaN heterostructures for HEMT application
6. Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties
7. Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2
8. Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates
9. Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time-resolved four-wave mixing technique
10. Growth studies of GaN and alloys on LiAlO 2 by MOVPE
11. Growth and characterization of AlGaN/GaN HEMT on SiCOI substrates
12. Integration of Cd(Zn)Se/ZnSe and GaN‐based lasers for optoelectronic applications in a green spectral range
13. Si(111) as alternative substrate for AlGaN/GaN HEMT
14. Laser threshold and optical gain of blue optically pumped InGaN/GaN multiple quantum wells (MQW) grown on Si.
15. Cathodoluminescence and electrophysical characterization of AlxGa1-xN epilayers.
16. Growth studies of GaN and alloys on LiAlO2 by MOVPE.
17. Gold catalyst initiated growth of GaN nanowires by MOCVD.
18. Dislocation density assessment via X-ray GaN rocking curve scans.
19. AlInN/GaN HEMTs on sapphire: dc and pulsed characterisation.
20. MOVPE growth and investigation of AlInN/AlN multiple quantum wells.
21. Optimisation of AlInN/GaN HEMT structures.
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