35 results on '"Humphreys, C."'
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2. SCM and SIMS investigations of unintentional doping in III-nitrides
3. Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source.
4. Studies of efficiency droop in GaN based LEDs
5. Electron holography of an in-situ biased GaN-based LED
6. Characterising the degree of polarisation anisotropy in an a -plane GaN film
7. Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers
8. Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire
9. Palladium-based on-wafer electroluminescence studies of GaN-based LED structures
10. Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells
11. High brightness near-ultraviolet resonant LEDs
12. Gross well-width fluctuations in InGaN quantum wells
13. Structural features in GaN grown on a Ge(111) substrate
14. High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n-type GaN
15. The effect of Si on the growth mode of GaN
16. The effect of AlGaN and SiN interlayers on GaN/Si(111)
17. Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
18. Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures
19. Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
20. On the origin of blue-green emission from heteroepitaxial nonpolar a-plane InGaN quantum wells.
21. Energy landscape and carrier wave-functions in InGaN/GaN quantum wells.
22. Practical issues in carrier-contrast imaging of GaN structures.
23. The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures.
24. High quantum efficiency InGaN/GaN structures emitting at 540 nm.
25. Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE.
26. Mechanisms of bending of threading dislocations in MOVPE-grown GaN on (0001) sapphire.
27. Three methods for the growth of InGaN nanostructures by MOVPE.
28. Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells.
29. Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure.
30. Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r -plane sapphire.
31. Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults.
32. Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN.
33. Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer.
34. Degradation of III-nitride laser diodes grown by molecular beam epitaxy.
35. Assessment of scanning spreading resistance microscopy for application to n-type GaN.
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