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2. Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

3. Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults

13. Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells.

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