25 results on '"Ohno, Y."'
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2. Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well
3. Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires
4. Fabrication of a few-electron In 0.56Ga 0.44As vertical quantum dot with an Al 2O 3 gate insulator
5. Effect of n +-GaAs thickness and doping density on spin injection of GaMnAs/n +-GaAs Esaki tunnel junction
6. Cyclotron resonance in corrugated lateral superlattices
7. Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells
8. Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb
9. Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
10. Electron spin relaxation beyond D'yakonov–Perel’ interaction in GaAs/AlGaAs quantum wells
11. Bilayer ν=2 quantum Hall state in parallel high magnetic field
12. Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator
13. Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction
14. Electron spin dynamics in InGaAs quantum wells
15. Room temperature lasing of quantum wire VCSELs by optical pumping grown on the B GaAs substrates by MBE
16. Valence band barrier at (Ga,Mn)As/GaAs interfaces
17. Control of ferromagnetism in field-effect transistor of a magnetic semiconductor
18. Temperature dependence of electroluminescence and I–V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions
19. Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures
20. Spin relaxation in n-modulation doped GaAs/AlGaAs quantum wells
21. Magnetotransport properties of (Ga,Mn)As grown on GaAs (411)A substrates
22. Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures
23. InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates
24. Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells
25. Bilayer n=2 quantum Hall state in parallel high magnetic field
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