1. Cu and nano-SiC doped MgB2 thick films on Ni substrates processed using a very short-time in situ reaction
- Author
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Josip Horvat, X.L. Wang, Q.W. Yao, and Shi Xue Dou
- Subjects
Quenching ,Materials science ,Scanning electron microscope ,Doping ,Analytical chemistry ,Energy Engineering and Power Technology ,Sintering ,chemistry.chemical_element ,Substrate (electronics) ,Liquid nitrogen ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Transition metal ,chemistry ,Electrical and Electronic Engineering ,Boron - Abstract
Pure and doped MgB 2 thick films were fabricated on Ni substrates by applying a coating mixture of powders of elemental magnesium and boron with varying amounts of elemental Cu and nano-SiC powders, followed by a high pressure press, and sintering at 840 or 900 °C for just a few minutes, and then quenching in liquid nitrogen. For films sintered at 900 °C, critical current densities J c were achieved as high as 1.4 × 10 6 A/cm 2 at 20 K and 2.3 × 10 5 A/cm 2 at 20 K and 2 T for the pure and SiC added films. Films doped with 5 wt.% of Cu powders were observed to have better adherence to the Ni substrate without degradation in T c , and J c was found to be slightly decreased, but still remains as high as 7 × 10 5 A/cm 2 at 20 K in zero field. It was observed that J c and irreversibility field increase with an increasing sintering temperature up to 900 °C. Furthermore, nano-SiC addition has significantly improved the irreversibility field compared to undoped MgB 2 films.
- Published
- 2004
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