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Abstract In this work, martensite was made over the wide temperature ranges and the two forms of martensite morphology in Cu 85.41 Al 9.97 Mn 4.62 shape memory alloy (SMA) were β′ and γ′ martensite phases. The SMA was characterized by the use of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. In order to fabricate the Schottky diode, Cu-Al-Mn alloy was used as a Schottky contact on p -type Si semiconductor substrate. Some of the crucial parameters for diodes such as ideality factor and barrier height values were obtained from electrical measurements. Illumination-dependent measurements showed that the fabricated device presents the behaviors of photodiode and photoconducting. Besides, it is found that the fabricated diode's structure is sensitive to illumination. Frequency-dependent measurements also indicated that the series resistance and interface state parameters are crucial to affect electrical characteristics of the fabricated diode. The experimental results showed that the fabricated Schottky device could be used in variety of optoelectronic applications. Highlights • Cu 85.41 Al 9.97 Mn 4.62 /p-Si/Al Schottky diode was fabricated. • Thermal evaporation technique was used to make contacts. • Cu 85.41 Al 9.97 Mn 4.62 shape memory alloy was characterized by using XRD and SEM. • Electrical characterization of device was reported by the use of I-V and C-V measurements. • Illumination effects to electrical characteristics were reported. [ABSTRACT FROM AUTHOR]

To prepare phosphotungstic acid (PTA) thin film was used drop-coating method. The film was dropped on p-Si having ohmic contact. The electrical and photovoltaic properties the fabricated Al/p-Si/phospotungstic acid(PTA)/Al photodiode were investigated. The current-voltage (I-V) measurements were carried out under dark and various illumination intensities. Under illumination, the photocurrent of the photodiode was found to be higher than the dark current. The prepared photodiode exhibited photovoltaic behavior. Also, the transient photocurrent measurement confirms that the photocurrent is sensitive to the illumination intensities. In addition, the capacitance/conductance-voltage (C/G-V) measurements were studied in the frequency range of 10 kHz to 1 MHz. The capacitance decreases with increasing frequency, suggesting a continuous distribution of interface states. As result, the prepared photodiode can be used in optoelectronic device applications. [ABSTRACT FROM AUTHOR]

Al/p-Si/BODIPY/Al diode was fabricated by forming BODIPY organic layer on p-Si having ohmic contact. The electrical and photoresponse properties of the prepared diode were investigated in detail. The current-voltage (I-V) measurements were performed under dark and various illumination intensities. It is observed that the photocurrent under illumination is higher than the dark current. The transient measurements indicate that the device exhibits both photodiode and photocapacitor behavior. We called this device as FYTRONIX device. The photoresponse behavior of the FYTRONIX device is controlled simultaneously by frequency and electric field. The FYRONIX device can be used as a photoresponse sensor in optoelectronic applications. [ABSTRACT FROM AUTHOR]

In this work, the indium oxide (In 2 O 3)-polyvinylpyrrolidone(PVP) film on the n-Si substrate was coated by a spin coating method. Thus, the Au/(In 2 O 3 -PVP)/n-Si metal-polymer-semiconductor (MPS) structure was fabricated. The capacitance/conductance-voltage-frequency (C-V-f and G/ω-V-f) characteristics of the fabricated MPS structure have been analyzed in the frequency range of 10 kHz - 1 MHz. The series resistance (R s) and interface state density (N ss) value of the MPS structure were determined by using the conductance and Hill-Coleman method, respectively. In addition, other electronic parameters such as the diffusion potential, barrier height, depletion layer width, and surface potential were extracted from the C−2-V characteristics. [ABSTRACT FROM AUTHOR]

In this study, the electrical properties of Au/TiO 2 /n-Si metal-insulator-semiconductor (MIS) capacitor were investigated by impedance spectroscopy (IS) technique. Impedance measurements were performed in the frequency range of 10 Hz-1 MHz for various bias voltages. The Cole-Cole plots show a single dielectric relaxation. The equivalent circuit was estimated from the shape of the Cole-Cole plots. The equivalent circuit of the MIS capacitor consists of a parallel resistor (R p) and capacitor (C p) in series with a resistor (R s). It is observed that the Cole-Cole plots indicate a semicircle. The parameters of the equivalent circuit were determined by fitting the impedance measurement data. While the R p value decreases with increasing the bias voltage, the C p and R s value are almost independent of the bias voltage. From the variation of log(R p) with log(V), the dominant conduction mechanism of the MIS capacitor was determined as space-charge limited current (SCLC) mechanism. • The electrical properties of MIS capacitor were investigated by impedance. • Spectroscopy technique. • The Cole-Cole plots showed a single dielectric relaxation. • The conduction mechanism of the MIS capacitor was analyzed. [ABSTRACT FROM AUTHOR]

In this study, the electronic properties of Au/n-Si (MS) and Au/(In 2 O 3 -PVP)/n-Si (MPS) diode have been investigated to see the effects of an organic (In 2 O 3 -PVP) interlayer by utilizing voltage-dependent current (I) and capacitance (C) measurements. The organic indium oxide (In 2 O 3) nanostructures were characterized by XRD, SEM and UV–Vis spectrophotometer techniques. The rectifying ratio (RR) of the fabricated MS and MPS diode at ± 3 V was found as 1.89 × 103 and 6.18 × 103, respectively. The electronic parameters for instance the ideality factor (n) and barrier height (Φ Bo) of MS and MPS diode were found as 1.94 and 2.20, and 0.73 eV and 0.76 eV, respectively. Additionally, series resistance (R s), n, and Φ Bo values were calculated by using Cheung's functions as second way to see the used calculation method and voltage effects on them. Therefore, the R s and Φ Bo values were determined from both the Norde method and C–V characteristics. • The electronic properties of Au/n-Si (MS) and Au/(In2O3-PVP)/n-Si (MPS) diode were investigated in detail. • The electrical parameters of these diodes were calculated from the measured I–V data. • Current conduction mechanisms of these diodes were determined from I–V measurements. [ABSTRACT FROM AUTHOR]

This study investigates the fabrication and performance analysis of Al/CuO:LaB6/p-Si/Al diodes with CuO-doped LaB6 interlayer films of varying concentrations (1%, 5%, and 10%). Experimental evidence demonstrates the limitations of 0% CuO doping, as pure LaB6 lacks a significant barrier height, resulting in ohmic behavior unsuitable for intended applications. Through comprehensive analyses under varying illuminations (20–100 mW/cm2) and frequencies (10 kHz–1 MHz), the study reveals that controlling CuO doping in LaB6 significantly enhances the effective barrier height at the LaB6:CuO heterojunction, improving rectification properties. This enhancement enables the diode to be well-suited for high-speed photonic devices utilizing one-step photoemission. The findings contribute to the development of high-performance LaB6-based devices, advancing photonic technologies by emphasizing the advantages of CuO doping. • CuO alloying transforms metal-like LaB6 into a semiconductor. • CuO:LaB6 p-type films enhance barrier height, rectification, and response speed. • The Al/CuO:LaB6/p-Si/Al diodes are room temperature photovoltaic and photoconductive. • One-step photon emission process accounts for LaB6:CuO films interactions. • Devices have fast and excellent photoconductive and photovoltaic one-step photoemission. [ABSTRACT FROM AUTHOR]

Abstract The boron-doped graphene oxide film was prepared using drop casting/coating technique. The film was coated by hydrothermal method on p-Si substrate and thus Al/p-Si/B-doped GO/Au diode was fabricated. The structural properties of the film was investigated by SEM and EDS techniques. The optoelectronic behavior of the diode was analyzed under various solar light and frequencies. The diode indicates that the forward current is higher that of reverse current with a rectification ratio (RR = I F /I R) of 7.30 × 104 at dark and ±5 V. The diode electronic parameters of the diode were computed from electrical characteristics. An increase in the photocurrent of the diode with solar light intensity indicates the presence of a photoconduction mechanism. The photoconductive and photovoltaic response of the diode were analyzed using photocurrent measurements. The interface state density (N ss) of the diode was analyzed from conductance technique. The optoelectrical results of the studied device suggest that the diode can be used in optic communications. Highlights • The boron-doped graphene oxide film was prepared using drop casting/coating technique. • The diode exhibits a photoconducting behavior. • The diode can be used in optic controlling applications. [ABSTRACT FROM AUTHOR]

The structural, optical and photoelectrical properties of the fabricated Al/PbS/p-Si/Al photodiode based on PbS nanocrystallites were investigated. The PbS nanocrystallites were characterized by X-ray diffraction (XRD), UV–VIS–NIR, Infrared and Raman spectroscopy. The XRD diffraction peaks show that the prepared PbS nanostructure is in high crystalline state. Various electrical parameters of the prepared photodiode were analyzed from the electrical characteristics based on I-V and C-V-G. The photodiode has a high rectification ratio of 5.85×10 4 at dark and ±4 V. Moreover, The photocurrent results indicate a strong photovoltaic behavior. The frequency dependence of capacitance and conductance characteristics was attributed to depletion region behavior of the photodiode. The diode was used to control solar panel power automatic tracking controller in dual axis. The fabricated photodiode works as a photosensor to control Solar tracking systems. [ABSTRACT FROM AUTHOR]

Abstract: The Al/p-Si Schottky diodes (33 dots) with the native interfacial insulator layer (SiO2) were fabricated on the same quarter Si wafer. The Schottky barrier height (SBH), ideality factor (n), interface state densities (N ss) and series resistance (R s) of these diodes have been calculated from their experimental forward bias current–voltage (I–V), reverse bias capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. Even though they are identically performed on the same quarter Si wafer, the calculated values of SBH have ranged from 0.680 to 0.736eV, and ideality factor n from 1.62 to 2.87, and interface state densities N ss from 0.395×1013 to 1.2×1013 eV−1 cm−2 and series resistance R s from 623 to 4900Ω. It was found that the values of barrier height Φ B obtained from C–V characteristics is larger than that of the value from I–V characteristics. The energy distribution of surface state density profiles for the selected six samples Al/p-Si Schottky diodes was determined from forward bias I–V characteristics by taking the bias dependence of the effective barrier height into account at room temperature. The experimental values of SBHs distributions obtained from the I–V and C −2–V characteristics have been fitted by a Gaussian function, and their mean values of SBHs have been calculated to be 0.708 and 0.810eV, respectively. Experimental results show that the interface states at a native insulator layer between metal and semiconductor play an important role in the value of the SBH, ideality factor, series resistance and the other main electrical parameters of Schottky diodes. [Copyright &y& Elsevier]

Frequency dependent dielectric properties of zinc oxide (ZnO) based metal-insulator-semiconductor (MIS) structure were analyzed in a wide frequency range. The ZnO thin layer on p-type silicon (100) was prepared by using atomic layer deposition (ALD). Dielectric parameters such as dielectric constant (ε ′), dielectric loss (ε ''), dielectric loss tangent (tanδ), electrical conductivity (σ ac) and complex electrical modulus (M∗ = M'+iM″) of this structure have been studied in depth by using spectroscopic technique in the different applied bias voltages and frequencies under the room temperature condition. According to experimental results, ε ′, ε '', tanδ, σ ac , M′ and M″ values were strongly depended on the applied voltage and the frequency in accumulation and depletion region. While the values of ε ′ reduce with rising frequency for each applied voltage, ε '' values reduce with rising frequency and decreasing voltage. The σ ac is observed to weak increase with rising frequency. M′ values go up by rising frequency. M″ values give a peak and the peak location moves to higher frequency by rising applied voltage. The experimental values confirmed that interfacial polarization can be readily ingenerated at low frequency and interface states located in the metal-semiconductor interface have an influence on the dielectric characteristics of Al/ZnO/p-Si MIS structures. • The ZnO thin layer on p-Si substrate was prepared by using atomic layer deposition (ALD). • Frequency dependent dielectric properties of ZnO based MIS structure were analyzed in a wide frequency range. • The dielectric behavior of the MIS structure have been thoroughly investigated by using spectroscopic technique. • ε′, ε″, tanδ, σ ac , M′ and M″ values were calculated from the measured capacitance and conductance data. • The experimental values confirmed that interfacial polarization can be readily occurred at low frequency. [ABSTRACT FROM AUTHOR]

We study on effect of frequency and temperature on capacitance (C) and conductance (G) characteristics of ZnO based Al/ZnO/p-Si (metal-insulator semiconductor (MIS)) structure. Cleaning procedures were applied before the thin film was grown, then the wafer's rough surface was sputtered 124 nm thickness with Al by the sputtering technique. After annealing once again in order to finish ohmic contact, it was coated 124 nm thickness with Al. ZnO film on the p-type silicon (100) substrate was deposited by Atomic Layer Deposition (ALD). Electrical properties of the prepared MIS structure have been researched by using temperature and frequency dependent input voltage (G-V and C–V) measurements at 100, 150, 200, 250 and 300 K temperatures for 100, 500, and 1000 kHz by using the conductance-voltage (G-V) and capacitance-voltage (C–V) measurements. We have obtained using the data, the properties of interface-state density (D it) and the efficiency of series-resistance (R s) have been studied. • Frequency and temperature dependent the properties of the Al/ZnO/p-Si structure were studied by using the ALD technique. • Measurements of capacitance and conductivity based on V of Al/ZnO/p-Si structure were taken at 100, 150, 200, 250 and 300 K temperature. • Rs and Dit are calculated in the three frequencies of 100-500-1000 kHz. • Also, G–V and C–V characteristics were used to analyze electronic parameters in detail. [ABSTRACT FROM AUTHOR]