1. Effect of high pressure on the electrical resistivity of optimally doped YBa2Cu3O7−δ single crystals with unidirectional planar defects.
- Author
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Vovk, R.V., Vovk, N.R., Khadzhai, G.Ya., Goulatis, I.L., and Chroneos, A.
- Subjects
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HIGH pressure (Science) , *ELECTRICAL resistivity , *YTTRIUM compounds , *SINGLE crystals , *CRYSTAL defects , *HYDROSTATIC pressure , *CRYSTAL structure - Abstract
Abstract: In the present work the effect of hydrostatic pressure up to 10kbar on in-plane electrical resistivity of well-structured YBa2Cu3O7−δ (δ<0.15, Т с≈91K, ΔТ с≈0.3K) single crystals was investigated. The influence of the twin boundaries on the electrical resistivity was minimized. The resistivities temperature dependences in the interval Т с up to 300K can be approximated by taking into account the linear term at high temperatures and the fluctuation conductivity (Maki–Thompson model) near Т с. The parameters of the linear dependence of R(T) are decreasing as the pressure is increasing. Т с increases linearly when the pressure increases with the derivative dT c /dP≈0.080K/kbar. Among the Maki–Thompson model parameters the inter-layer distance, d, can be considered to be independent from pressure, the transverse coherence length, ξ c (0)∼0.1d. [Copyright &y& Elsevier]
- Published
- 2013
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