1. Dynamic processes of charges generation in intermediate connectors for tandem organic light emitting diodes.
- Author
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Yang, Jin-Peng, Wang, Wen-Qin, Shang, Lin-Tai, Cheng, Li-Wen, Shen, Xiao-Shuang, Zeng, Xiang-Hua, Li, Yan-Qing, and Tang, Jian-Xin
- Subjects
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TRANSITION metal oxides , *ORGANIC light emitting diodes , *MOLYBDENUM oxides , *ELECTRIC capacity , *CURRENT density (Electromagnetism) - Abstract
The role of transition metal oxides (TMOs) based intermediate connectors in tandem organic light emitting diodes (OLEDs) has been studied via capacitance-voltage and current-voltage characteristics, in order to elucidate the dynamic processes of charges generation and transport within externally applied voltages. The TMO-based intermediate connectors are composed of molybdenum trioxide (MoO 3 ) and cesium azide (CsN 3 )-doped-4, 7–diphenyl-1, 10-phenanthroline (BPhen) layers, where MoO 3 and CsN 3 are used due to low deposition temperatures. From the obtained results of capacitance and current density, charges generation in CsN 3 :BPhen/MoO 3 /NPB is proposed to the defect states in thermally evaporated MoO 3 , which offers a minimal energy offset for charges generation. Moreover, our results clearly indicate that charges generation efficiency is not only relying on the MoO 3 -NPB interface, but also influenced by CsN 3 :BPhen-MoO 3 interface. CsN 3 doped BPhen layer further improves charges separation efficiency, which finally results in favorable charges transport into the adjacent layers and ensure to function efficiently for tandem OLEDs. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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