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This contribution investigates the impact of adding transition metal of Ti to CeO y samples at various concentrations referring to 0, 15.84, 24.46, 34.46, 36.23, 38.46, 45.38% and pure TiO y , correspondingly. The samples were fabricated by the magnetron sputtering technique. X-ray diffraction (XRD) configurations demonstrate the presence of α-Ce 2 O 3 and Ce 2 O 3 phases with increased Ti contents in the systems. X-ray photoelectron spectroscopy (XPS) experimentation confirms the purity of the S1-sample (CeO 2) and the purity of the S8-sample (TiO 2). Further XPS analysis reveals that Ti incorporation in the doped systems functions as a reducing agent because of the existence of α-Ce 2 O 3 and Ce 2 O 3 phases. Moreover, based on UV–vis spectroscopy results, the studied samples exhibit indirect optical energy band-gaps reduced from 2.6 to 2.35 eV with the increase of Ti concentrations of 0–45.38% in (S1-S7), respectively. In reference to bandgap 2.35 eV, a slight rise in band gaps was detected for S3 sample. However, an observable increase in the band gap of 2.9 eV occurred for S8 (pure TiO 2). Optical analysis of the calculated energy loss parameters demonstrates that all the studied samples reveal small amounts of energy loss. Our results suggest that the improved optical properties of Ti-doped CeO y films could serve for various optical applications. [ABSTRACT FROM AUTHOR]