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Mode converters, crucial elements within photonic integrated circuits (PICs) designed for multimode optical transmission and switching systems, present a challenge due to their bulky structures in thin-film lithium niobate (TFLN) integrated platforms, which are incompatible with the compact and efficient nature desired for dense PICs. In this work, we propose TE 1 -TE 0 , TE 2 -TE 0 , and TE 3 -TE 0 mode converters in shallowly etched TFLN, within small footprints. The experimental results show that the insertion loss is 0.4 dB, 0.6 dB, and 0.5 dB for the compact TE 1 -TE 0 , TE 2 -TE 0 , and TE 3 -TE 0 mode converters, respectively, and these devices can be operated within a wide 1 dB bandwidth (BW) over 100 nm. This work facilitates the development of low-loss, broadband, and compact monolithically integrated photonic devices for future multimode communication networks in TFLN integrated platforms.

As the critical device of microwave photonics and optical communication, the low-loss and high-efficiency optical phase shifter has attracted intense attention in photonic integrated circuits. However, most of their applications are restricted to a particular band. Little is known about the characteristics of broadband. In this paper, an SiN-MoS 2 integrated broadband racetrack phase shifter is demonstrated. The coupling region and the structure of the racetrack resonator are elaborately designed to improve the coupling efficiency at each resonance wavelength. The ionic liquid is introduced to form a capacitor structure. Then, the effective index of the hybrid waveguide can be efficiently tuned by adjusting the bias voltage. We achieve a phase shifter with a tunable range covering all the WDM bands and even up to 1900 nm. The highest phase tuning efficiency is measured to be 72.75 pm/V at 1860 nm, and the corresponding half-wave-voltage-length product is calculated as 0.0608 V·cm.

With the magnetron-sputtering deposition method, α phase indium selenide (α-In 2 Se 3 ) was developed into a saturable absorber (SA) with wideband saturable absorption property at 800, 1560, and 1930 nm. After inserting the α-In 2 Se 3 SA into erbium-doped fiber laser (EDFL) and thulium-doped fiber laser (TDFL) systems, we can easily obtain stable soliton pulse trains. The pulse duration/pulse energy/slope efficiency for EDFL and TDFL were 276 fs/2.03 nJ/15.8% and 1.02 ps/7.1 nJ/23.5%, respectively. These results showed that the MSD-grown α-In 2 Se 3 could be regarded as high efficiency material to be applied in ultrafast photonics.