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A mid-IR wire-grid polarizer with a 500 nm pitch was fabricated on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) by the thermal imprinting of periodic grating followed by the thermal evaporation of Al metal. After imprinting, deposition of Al on the grating at an oblique angle produced a wire-grid polarizer. The fabricated polarizer showed polarization with TM transmittance greater than 60% at 5-9 μm wavelengths and an extinction ratio greater than 20 dB at 3.5-11 μm wavelengths. This polarizer with a high extinction ratio can be fabricated more simply and less expensively than conventional IR polarizers., (© 2011 Optical Society of America)

Using two-beam interference lithography and dry etching, we fabricated a mid-IR wire-grid polarizer consisting of a 350 nm pitch WSi grating on an Y(2)O(3) ceramic substrate, which has wider transparency than sapphire. The transmittance of TM polarization was greater than 70% in the 3-7 μm wavelength range without antireflection films, and the extinction ratio was over 20 dB in the 2.5-5 μm wavelength range. The wire-grid polarizer with the Y(2)O(3) ceramic substrate provides high durability and good IR transparency.

A cavity-resonator-integrated grating input/output coupler (CRIGIC) is designed to operate at about 850 nm wavelength for high-efficiency vertical coupling of a guided wave and a free-space wave with a small aperture. The CRIGIC consists of a grating coupler and a waveguide cavity resonator constructed by two distributed Bragg reflectors. A coupling efficiency of 96% with a 3 dB bandwidth of 1.2 nm is predicted by a theoretical calculation. An output coupling efficiency of about 60% is experimentally demonstrated on a 20 microm aperture device, fabricated in a thin-film SiO(2)-based waveguide on a substrate with an Au reflection layer, for what we believe to be the first time.

An infrared (IR) polarizer with tungsten silicide (WSi) wire grid was fabricated by two-beam interference exposure and reactive ion etching. To enhance TM transmittance, silicon monoxide was deposited between the WSi wire grid (400 nm period) and a Si substrate. The transmittance was over 80% in the 4-5 microm wavelength range. The ratio of TM and TE transmittances was over 100 (20 dB) in the 2.5-6 microm wavelength range. The fabricated polarizer has higher durability and better compatibility with microfabrication processes compared with conventional IR polarizers.

Silica-based one-dimensional photonic crystal (1D-PC) is fabricated by use of a high-spatial-frequency grating with input and output surfaces tilted with respect to its periodic direction. An incident beam is coupled with the first photonic band in the second Brillouin zone of the 1D-PC. The output beam angle changes 3 degrees with a wavelength change of 1%. A prototype of an ultrasmall demultiplexer is demonstrated by use of a silica slab waveguide with 1D-PC.

Multilevel phase-type diffractive lenses were fabricated by translating a filament of a femtosecond laser pulse into three-dimensional space inside synthesized silica. The profile of the lenses was designed by use of a multi-level approximation to a kinoform lens. Two-level diffractive lenses with multiple layers along the optical axis provided a maximum efficiency of 37.6% at a wavelength of 632.8 nm. A four-level diffractive lens provided a maximum efficiency of 56.9%. The lenses fabricated with filamentation were free from birefringence.

A compact and monolithic four-channel demultiplexer with 20-nm spacing was fabricated by use of a high-spatial-frequency transmission grating buried in a silica waveguide. The grating was successfully buried in a silica slab waveguide by overcladding by plasma-enhanced chemical-vapor deposition. The device's size was approximately 5.1 mm x 9.2 mm. The average insertion loss was 13 dB. The average cross talk was -15 dB for adjacent channels and -19 dB for nonadjacent channels. The polarization-dependent loss was estimated to be as low as 0.7 dB.

Refractive-index changes can be induced by filamentation of 800-nm, 1-kHz femtosecond laser pulses in silica glass. Two-dimensional translation of a 40-microm-long filament leads to the formation of a curved waveguide because of bending by the previously induced refractive-index change. The fabrication of 2-mm directional couplers to split the coupled beam into 1:1 at a wavelength of 632.8 nm is demonstrated. The realization of three-dimensional directional couplers and wavelength division in the output from the couplers is also demonstrated.

Waveguide Bragg gratings were fabricated by plasma-enhanced chemical-vapor deposition followed by irradiation with KrF excimer laser light through a phase mask. The period of the Bragg grating was 0.53 mum, and the Bragg wavelength was ~1.53 mum . The temperature dependence of the Bragg wavelength was 11 pm/ degrees C for a 10GeO(2) -90SiO(2)(mol.%) core waveguide on a Si substrate, and the Bragg wavelength shift was successfully reduced to 5.0pm/ degrees C by use of a 14GeO(2)-12B(2)O(3)-74SiO(2) (mol.%) core and a crystallized glass substrate with a thermal-expansion coefficient of -2.0x10(-6)(/ degrees C) .

By moving silica glass in a preprogrammed structure, we directly produced three-dimensional holes with femtosecond laser pulses in single step. When distilled water was introduced into a hole drilled from the rear surface of the glass, the effects of blocking and redeposition of ablated material were greatly reduced and the aspect ratio of the depth of the hole was increased. Straight holes of 4-mu;m diameter were more than 200 microm deep. Three-dimensional channels can be micromachined inside transparent materials by use of this method, as we have demonstrated by drilling a square-wave-shaped hole inside silica glass.

We used voxels of an intensely modified refractive index generated by multiphoton absorption at the focus of femtosecond laser pulses in Ge-doped silica as photonic atoms to build photonic lattices. The voxels were spatially organized in the same way as atoms arrayed in actual crystals, and a Bragg-like diffraction from the photonic atoms was evidenced by a photonic bandgap (PBG) effect. Postfabrication annealing was found to be essential for reducing random scattering and therefore enhancing PBG. This technique has an intrinsic capability of individually addressing single atoms. Therefore the introduction of defect structures was much facilitated, making the technique quite appealing for photonic research and applications.

We demonstrate direct three-dimensional (3-D) microfabrication inside a volume of silica glass. The whole fabrication process was carried out in two steps:(i) writing of the preprogrammed 3-D pattern inside silica glass by focused femtosecond (fs) laser pulses and (ii) etching of the written structure in a 5% aqueous solution of HF acid. This technique allows fabrication of 3-D channels as small as 10mum in diameter inside the volume with any angle of interconnection and a high aspect ratio (10mum -diameter channels in a 100mum -thick silica slab).

We investigated the relationship between the formation of filaments and local refractive-index changes induced by femtosecond laser pulses in silica glass. In situ observation revealed that the location of a filament coincided with that of the refractive-index change. Observation also showed that the region of refractive-index change was elongated toward the upstream direction of the laser pulses with increasing exposure time. The region of refractive-index change was several hundred micrometers long, and its diameter was smaller than 2 mum. The refractive-index change was confirmed by two of three different methods to be as large as 0.8 x 10(-2).

We demonstrate that one can seize and translate voids formed by IR femtosecond laser pulses inside silica glass and can also cause two voids to merge into one. We also present clear evidence of a void and its surrounding region by showing scanning electron microscope images of cleaved voids, which we produced by cleaving through the glass along a plane that included a thin laser-ablated line on the surface of the glass and the voids formed inside.

Amorphous xGeO(2)-(1-x)SiO(2) thin films exhibit large negative index changes (4-8%) in the high GeO(2) region (x>~0.25) on irradiation with ArF laser pulses. The sign of the index change is opposite the low GeO(2) region X<0.25, and the magnitude of the index change is larger by an order of magnitude than that reported so far. Cross-sectional transmission electron microscope observation has revealed that nanometer-scale phase separation is induced in these highly photosensitive glasses by irradiation with ArF excimer laser light pulses or electron beams. This is a first finding of microphase separation in SiO(2)-GeO(2) glasses by irradiation and provides an essential constraint on the modeling of photonic effects induced by irradiation in these glasses.

The interference fringes formed in a long-period fiber grating pair are sensitive to the loss in the cladding mode, which can be induced by bending or by coating on the fiber. Assuming that there is no loss and that both gratings are identical, the interference fringes are shown to have 100% contrast when each grating has 50% transmissivity. By contrast, if the cladding mode is absorbed or scattered the fringe contrast is shown to be degraded. The spectral behaviors of a long-period fiber grating pair with loss is analyzed by the coupled-mode theory and is compared with experimental results.

Photochemical reactions in 10 GeO(2)-90 SiO(2) glass induced by irradiation with excimer lasers (KrF, 5.0 eV, XeCl, 4.0 eV) and a Hg lamp (4.9 eV) were examined. The irradiation with excimer lasers generated two types of paramagnetic defect, an electron-trapped center associated with fourfold coordinated Ge ions and a self-trapped hole center on bridging oxygen. Taking the optical band gap (~7.1 eV) of the glass obtained in this work and the power density of laser pulses [10-90 mJ/(cm(2) pulse), pulse duration 20 ns] into account, we concluded that these centers were formed by band-to-band excitation by two-photon absorption process. On the other hand, the lamp illumination ( 16 mW/cm(2)) caused the formation of Ge E' centers from preexisting oxygen-vacancy-type defects by the one-photon absorption process. These two kinds of reaction proceed independently, depending on the power densities of UV beams, at least in our experimental condition.