Search

The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide (SiC) to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with 1-µm-thick aluminum nitride and demonstrate a 4H-silicon-carbide-on-aluminum-nitride integrated photonic platform for the first time to our knowledge. Efficient grating couplers, low-loss waveguides, and compact microring resonators with intrinsic quality factors up to 210,000 are fabricated. In addition, by undercutting the aluminum nitride layer, the intrinsic quality factor of the silicon carbide microring is improved by nearly one order of magnitude (1.8 million). Finally, an optical pump-probe method is developed to measure the thermal conductivity of the aluminum nitride layer, which is estimated to be over 30 times of that of silicon dioxide.

We propose a single-layer graphene electro-absorption modulator (EAM) with an angled waveguide sidewall. By utilizing the hybridization of the TM 0 mode and the TE 1 mode in the waveguide, the light-graphene interaction is enhanced. A modulation depth of 0.124 dB/µm and a figure of merit up to 25 are obtained at 1550 nm. Moreover, we show that the longitudinal electric field plays a significant role in making the optical absorption efficient, which indicates that modulation depth can be increased by enhancing the longitudinal electric field in modulators. This provides a promising solution for the future design of graphene optical modulators.

Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. In this work, we carried out an exploratory investigation of the Pockels effect in high-quality-factor (high-Q) 4H-SiC microresonators and demonstrated gigahertz-level electro-optic modulation for the first time. The extracted Pockels coefficients show certain variations among 4H-SiC wafers from different manufacturers, with the magnitudes of r 13 and r 33 estimated to be in the range of (0.3-0.7) pm/V and (0-0.03) pm/V, respectively.

We demonstrate theoretically and experimentally a novel photonic spin Hall effect (PSHE), to the best of our knowledge, at an interface between air and uniaxial crystal, whose optical axis is within the interface plane. Owing to the anisotropy of the crystal, partial cross polarization conversion occurs. For a horizontally polarized paraxial Gaussian beam incidence, a linear polarization gradient forms along the in-plane wavevector in the reflected beam, allowing us to achieve spin separation in real space. The spin separation of the reflected beam can be tuned by rotating the optical axis of the crystal. A maximum spin-dependent displacement up to 0.45 times the incident beam waist is obtained at Brewster incidence. This novel anisotropy-induced PSHE deepens the understanding of spin-orbit interaction and provides a new way for control of spin photons.

A narrowband thermal emitter exhibits higher energy efficiency and sensitivity in molecule sensing and other mid-infrared (MIR) spectral range applications compared to a blackbody emitter. Most narrowband thermal emitters involving surface plasmons have a relatively low quality factor (Q-factor) and require complex fabrication processes. Here we propose a bilayer cavity-enhanced Tamm plasmon (TP) structure with a high/low refractive index bilayer sandwiched between a metal and distributed Bragg reflector (DBR) to achieve an enhanced Q-factor and maintain higher emittance over a conventional pure DBR-metal TP structure-based emitters. The large optical thickness of the high/low index bilayer cavity aids in increasing the Q-factor (∼172 for emission) of the cavity resonance. Furthermore, a tunable Q-factor is achieved (Q from 172 to 47 for emission) by incorporating phase-changing material Ge 2 Sb 2 Te 5 . This easy-to-fabricate and tunable high Q-factor emitter is competent as a narrowband MIR light source in molecule sensing, typically gas sensing applications.

Polar crystals can enable strong light-matter interaction at an infrared regime and provide many practical applications including thermal emission. However, the dynamic control of thermal emission based on polar crystals remains elusive as the lattice vibrations are solely determined by the crystal structure. Here, a nonvolatile tunable midinfrared thermal emitter enabled by a phase-changing film Ge 2 Sb 2 Te 5 on silicon carbide polar crystal is demonstrated. By controlling the state of Ge 2 Sb 2 Te 5 from an amorphous to a crystalline state, the emissivity of the thermal emitter is tuned from a low value to near unity with a maximum change in peak emissivity exceeding 10 dB over the Reststrahlen band of SiC (11.4 μm to 12.3 μm). This nonvolatile tunable thermal emitter, which presents a lot of advantages in terms of tunability, zero static power, angular insensitivity, and ease of fabrication, can be potentially applied for light sources, infrared camouflage, and radiative cooling devices.

We report low-loss channel waveguides in a single-crystal LiNbO(3) thin film achieved using the annealed proton exchange process. The simulation indicated that the mode size of the α phase channel waveguide could be as small as 1.2  μm(2). Waveguides with several different widths were fabricated, and the 4 μm-wide channel waveguide exhibited a mode size of 4.6  μm(2). Its propagation loss was accurately evaluated to be as low as 0.6 dB/cm at 1.55 μm. The single-crystal lattice structure in the LiNbO(3) thin film was preserved by a moderate annealed proton exchange process (5 min of proton exchange at 200°C, followed by 3 h annealing at 350°C), as revealed by measuring the extraordinary refractive index change and x ray rocking curve. A longer proton exchange time followed by stronger annealing would destroy the crystal structure and induce a high loss in the channel waveguides.

We report on a photonic crystal slab patterned on a 690 nm thick LiNbO3 thin film bonded to SiO2 on lithium niobate substrate. The transmission spectrum is measured and a broad and clear photonic bandgap ranging from 1335 to 1535 nm with a maximum extinction ratio of more than 20 dB is observed. The bandgap is simulated by plane wave expansion and 3D finite-difference time-domain methods. Such a deep and broad bandgap structure can be used to form high-performance photonic devices and circuits on the platform of lithium niobate-on-insulator.

In this Letter, we propose a hybrid plasmonic nanosystem consisting of a silver cladding layer with a semicylinder bump on top of InGaAsP nanowire. Because of the coupling between the dielectric waveguide mode and surface plasmon polariton mode, the hybrid plasmonic mode can exhibit low loss with strong field localization. The finite element method numerical simulations are employed to evaluate the performances of the hybrid mode. In order to achieve the lossless propagation of the hybrid mode with the mode area of 0.0058(λ²/4) at 1.55 μm, the material gain of 200 nm × 300 nm InGaAsP nanowire should reach 1223 cm⁻¹.

We propose a hybrid waveguide-plasmon system consisting of gold pillar arrays on top of a dielectric waveguide. The formation of extraordinary transmissions induced by the hybrid waveguide-plasmon resonances is investigated by rigorous coupled-wave analysis. The characteristics of the hybrid resonances can be predicted by introducing the photonic crystal slab theory. Extremely narrow absorption peaks and the electromagnetically induced transparency-like optical property are demonstrated in our hybrid system.

The cross conversion between surface plasmon polaritons (SPPs) and quasi-cylindrical waves (CWs) is theoretically reexamined. Except for the CW-to-SPP conversion, we find the SPP-to-CW conversion, as well as the reflection and transmission of the CW, plays an indispensable role in the interaction between SPPs and light via periodic grooves. The completeness of the whole scattering coefficients is emphasized by an SPP-CW model proposed to quantitatively predict the SPP excitation efficiency for any number of periodic grooves.

The debate on the underlying physics of the extraordinary optical transmission (EOT) through a metallic nano-slit surrounded with periodic grooves is largely resolved. We clarify that the EOT originates from the interference between the slit modes excited by the incident light and by the groove-generated surface plasmon polaritons modulated by the horizontal Fabry-Perot resonance effect due to the surrounding grooves. The quantitative model derived will greatly simplify the design of such structures.

Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous Si (a-Si) solar cell are numerically studied. At the interfaces between a-Si and metal materials, the excitation of surface-plasmon polaritons leads to obvious absorption enhancements in a wide near-IR range for different ridge shapes and periods. The highest enhancement factor of the cell external quantum efficiency is estimated to be 3.32. The optimized structure can achieve an increase of 17.12% in the cell efficiency.