1. Compact epsilon-near-zero silicon photonic phase modulators
- Author
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Ting S. Luk, Isak C. Reines, Salvatore Campione, Michael G. Wood, and Darwin K. Serkland
- Subjects
Silicon photonics ,Materials science ,Silicon ,business.industry ,Phase (waves) ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Indium tin oxide ,010309 optics ,chemistry.chemical_compound ,Optics ,chemistry ,Modulation ,0103 physical sciences ,Cadmium oxide ,Figure of merit ,0210 nano-technology ,business ,Phase modulation - Abstract
In this paper, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process. We compare phase modulator performance using both indium oxide (In2O3) and cadmium oxide (CdO) TCO materials. Our findings show that practical phase modulation can be achieved only when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. The CdO-based phase modulator has a figure of merit of 17.1°/dB in a compact 5 μm length. This figure of merit can be increased further through the proper selection of high-mobility TCOs, opening a path for device miniaturization and increased phase shifts.
- Published
- 2018