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We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers emit between 760 and 775 nm and 2 mm long lasers with uncoated facets have threshold current density of 260 Acm(-2), compared with 150 Acm(-2) for InP quantum dot samples, which emit at shorter wavelengths, 715-725 nm. Pulsed lasing is demonstrated for InAsP dots up to 380 K with up to 200 mW output power. Measured absorption spectra indicate the addition of Arsenic to the dots has shifted the available transitions to longer wavelengths but also results in a much larger degree of spectral broadening. These spectra and transmission electron microscopy images indicate that the InAsP dots have a much larger degree of inhomogeneous broadening due to dot size variation, both from layer to layer and within a layer.

Using the optically pumped variable stripe length technique we demonstrate that, through calibration of measured spontaneous emission spectra, it is possible to determine the total radiative recombination rate for a gain material as a function of the intrinsic quasi-Fermi level separation. Specifically we compare the room temperature optical characteristics of a self-assembled InP/GaInP quantum dot material measured using both optical and electrical pumping. The comparison reveals good agreement between gain and emission spectra measured with the two techniques, for the same inversion, from which we conclude that the carrier distributions in each case are equivalent. The results demonstrate that the optically pumped experiment can provide a good measure of the overall radiative efficiency.