1. Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics
- Author
-
Ryan A. DeCrescent, Ryan G. Anderson, Clementine Symonds, Jon A. Schuller, Joel Bellessa, James S. Speck, Steven P. DenBaars, Guillaume Lheureux, Morteza Monavarian, Shuji Nakamura, Materials Department [Santa Barbara], University of California [Santa Barbara] (UCSB), University of California-University of California, Department of Physics [Santa Barbara] (PHYSICS-UCSB), Matériaux et nanostructures photoniques (MNP), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Reflectance spectroscopy ,Optical sensing ,Refractive index ,FOS: Physical sciences ,02 engineering and technology ,Surface plasmons ,Bragg reflectors ,01 natural sciences ,7. Clean energy ,Spectral line ,[SPI]Engineering Sciences [physics] ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,0103 physical sciences ,[CHIM]Chemical Sciences ,Distributed Bragg reflectors ,010306 general physics ,Plasmon ,[PHYS]Physics [physics] ,Condensed Matter - Mesoscale and Nanoscale Physics ,business.industry ,Nanoporous ,021001 nanoscience & nanotechnology ,Distributed Bragg reflector ,Atomic and Molecular Physics, and Optics ,Wavelength ,Semiconductor ,Optoelectronics ,Photonics ,0210 nano-technology ,business ,Layer (electronics) ,Optics (physics.optics) ,Physics - Optics - Abstract
We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRs fabricated using electrochemical etching on freestanding semipolar GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The results indicate presence of a TP mode at ~ 455 nm on the structure after the Ag deposition. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (~ 4 nm shift when changing the ambient within the pores from air with n = 1 to isopropanol n = 1.3) , suggesting an application of the nanoporous GaN based TP structure for optical sensing., 8 pages, 4 figures
- Published
- 2020