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We propose a lattice-matched Ge/GeSiSn quantum cascade detector (QCD) capable of operating in the longwave infrared. The optical absorption and carrier transport based on intersubband transitions all occur within the L-valley of the conduction band of the group-IV material system using N-doped quantum wells (QWs). The waveguided lattice matched structure can be deposited strain free on top of a Ge buffer grown on Si substrate, and is end-coupled to low-loss on-chip Ge waveguides. We optimized the QCD structure through the analysis of the photoresponsivity and detectivity D*. The QCD operates in photovoltaic mode with narrow spectral response that is peaked anywhere in the 9 to 16 µm range, tunable by design. This work aims to push the optical response of the photodetectors made from the SiGeSn material system to longer wavelengths. The study suggests the QCD response can indeed significantly extend the spectral range beyond that of the photodiodes and photoconductors made from the same group-IV system for a wide variety of applications in imaging, sensing, lidar, and space-and-fiber communications.

We report on the design, fabrication, and characterization of mass-producible, sensitive, intensity-detection-based planar waveguide sensors for rapid refractive index (RI) sensing; the sensors comprise suspended glass planar waveguides on glass substrates, and are integrated with microfluidic channels. They are facilely and cost-effectively constructed via vacuum-less processes. They yield a high throughput, enabling mass production. The sensors respond to solutions with different RIs via variations in the transmitted optical power due to coupling loss in the sensing region, facilitating real-time and simple RI detection. Experiments yield a good resolution of 5.65 × 10−4 RIU. This work has major implications for several RI-sensing-based applications.

We report on tensile-strained Ge/Sisub0.11/subGesub0.89/subquantum-well (QW) metal-semiconductor-metal (MSM) photodetectors on Si substrates. A tensile strain of 0.21% is introduced into the Ge wells by growing the QW stack on in-situ annealed Ge-on-Si virtual substrates (VS). The optical characterization of Ge/Sisub0.11/subGesub0.89/subQW MSM photodetectors indicates that the optical response increases to a wavelength of 1.5 μm or higher owing to the strain-induced direct bandgap shrinkage. Analysis of the band structure by using a k · p model suggests that by optimizing the tensile strain and Ge well width, tensile-strained Ge/SiGe QW photodetectors can be designed to cover the telecommunication C-band and beyond for optical telecommunications and on-chip interconnection.

We propose and develop an intensity-detection-based refractive-index (RI) sensor for low-cost, rapid RI sensing. The sensor is composed of a polymer bent ridge waveguide (BRWG) structure on a low-cost glass substrate and is integrated with a microfluidic channel. Different-RI solutions flowing through the BRWG sensing region induce output optical power variations caused by optical bend losses, enabling simple and real-time RI detection. Additionally, the sensors are fabricated using rapid and cost-effective vacuum-less processes, attaining the low cost and high throughput required for mass production. A good RI solution of 5.31 10−4 × RIU−1 is achieved from the RI experiments. This study demonstrates mass-producible and compact RI sensors for rapid and sensitive chemical analysis and biomedical sensing.

We present an investigation on the use of low-index cavity layers to enhance the sensitivity of injection-molded guided-mode resonance (GMR) sensors. By adjusting the sputtering parameters, a low-index cavity layer is created at the interface between the waveguide layer and the substrate. Refractive index measurements show that a sensitivity enhancement of up to 220% is achieved with a cavity layer, in comparison to a reference GMR sensor without a cavity layer. Finite-element-method simulations were performed, and the results indicate that the cavities significantly redistribute the resonance mode profile and thus enhances the sensitivity. The present investigation demonstrates a new method for enhancing the sensitivity of injection-molded GMR sensors for high-sensitivity label-free biosensing.

We propose and develop a theoretical gain model for an n-doped, tensile-strained Ge-Si(x)Ge(y)Sn(1-x-y) quantum-well laser. Tensile strain and n doping in Ge active layers can help achieve population inversion in the direct conduction band and provide optical gain. We show our theoretical model for the bandgap structure, the polarization-dependent optical gain spectrum, and the free-carrier absorption of the n-type doped, tensile-strained Ge quantum-well laser. Despite the free-carrier absorption due to the n-type doping, a significant net gain can be obtained from the direct transition. We also present our waveguide design and calculate the optical confinement factors to estimate the modal gain and predict the threshold carrier density.