1. Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
- Author
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Haojun Zhang, Philippe De Mierry, YiChao Chow, Aidan A. Taylor, Zainuriah Hassan, Bastien Bonef, Shuji Nakamura, Steven P. DenBaars, Jared Kearns, Matthew S. Wong, Hongjian Li, Panpan Li, Michel Khoury, Department of Computer Science and Engineering [Hong Kong, China], The Chinese University of Hong Kong [Hong Kong], Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Ingénierie des Systèmes Biologiques et des Procédés (LISBP), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de la Recherche Agronomique (INRA), Department of Plant Biology and Ecology, College of Lif e Sciences, Nankai University (NKU), University of California [Santa Barbara] (UCSB), University of California, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS), Materials Department, UCSB, COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut National de la Recherche Agronomique (INRA)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
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Materials science ,Passivation ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,law.invention ,010309 optics ,[SPI]Engineering Sciences [physics] ,Optics ,law ,0103 physical sciences ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,Quantum well ,ComputingMilieux_MISCELLANEOUS ,[PHYS]Physics [physics] ,business.industry ,Optical polarization ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,Blueshift ,chemistry ,Sapphire ,Optoelectronics ,0210 nano-technology ,business ,Current density ,Indium ,Light-emitting diode - Abstract
International audience; We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm 2 to 100 × 100 µm 2 , grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium composition and indicated that no indium clusters were observed in the QWs. The µLEDs showed a small wavelength blueshift of 5 nm, as the current density increased from 5 to 90 A/cm 2 and exhibited a size-independent EQE of 2% by sidewall passivation using atomiclayer deposition, followed by an extremely low leakage current of ~0.1 nA at −5 V. Moreover, optical polarization behavior with a polarization ratio of 40% was observed. This work demonstrated long-wavelength µLEDs fabricated on semipolar GaN grown on foreign substrate, which are applicable for a variety of display applications at a low cost.
- Published
- 2019
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