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Figure 1(b) in [V. F. Gili et al, Opt. Express 24, 15965 (2016)10.1364/OE.24.015965] is corrupted and is corrected in this erratum.

Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III–V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III–V semiconductor materials for optomechanics applications: GaAs lattice-matched In0.5Ga0.5P and Al0.4Ga0.6As. We report on the fabrication and optical characterization of high frequency (500–700 MHz) optomechanical disks made out of these two materials, demonstrating high optical and mechanical Q in ambient conditions. Finally we achieve operating these new devices as laser-sustained optomechanical self-oscillators, and draw a first comparative study with existing GaAs systems.

Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III-V semiconductor materials for optomechanics applications: GaAs lattice-matched In

We report on continuous-wave sum and difference frequency generation in selectively oxidized AlGaAs waveguides designed for degenerate spontaneous parametric down-conversion at 1.55 μm. Sum frequency generation with two pumps around this wavelength is observed with a conversion efficiency η = 1080%W-1cm-2. Difference frequency generation is also performed near degeneracy, with an external conversion efficiency η(ext) = 9.7%W-1cm-2 and a tunability of 570 nm. These results are promising for the feasibility of an integrated telecom source based on parametric fluorescence.

A nanoscale metal-semiconductor-metal photodetector with a 40 nm-thick GaAs absorbing layer has been studied numerically and experimentally. A gold nanowire array is the top mirror of a Fabry-Perot cavity and forms interdigitated Schottky contacts. Nearly perfect absorption is achieved in TE polarization. It is shown numerically that the gold nanowire array induces light absorption in GaAs nanowires with tiny sections (100 nm × 40 nm). High external quantum efficiency (η > 40 %) is demonstrated.

Observation of quantized vortices in non-equilibrium polariton condensates has been reported either by spontaneous formation and pinning in the presence of disorder or by imprinting them onto the signal or idler of an optical parametric oscillator (OPO). Here, we report a detailed analysis of the creation and annihilation of polariton vortex-antivortex pairs in the signal state of a polariton OPO by means of a short optical Gaussian pulse at a certain finite pump wave-vector. A time-resolved, interferometric analysis of the emission allows us to extract the phase of the perturbed condensate and to reveal the dynamics of the supercurrents created by the pulsed probe. This flow is responsible for the appearance of the topological defects when counter-propagating to the underlying currents of the OPO signal., 8 pages, 5 figures

We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on type II parametric down conversion with a counterpropagating phase-matching, pump photons generate photon pairs with an efficiency of about 10(-11) and a spectral linewidth of 0.3 nm for a 1 mm long sample. The indistiguishability of the photons of the pair is measured via a Hong-Ou-Mandel two-photon interference experiment showing a visibility of 85 %. This work opens a route towards new guided-wave semiconductor quantum devices.