1. Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition
- Author
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Hameed A. Naseem, Huong Tran, Shui-Qing Yu, Mehrshad Mehboudi, Aboozar Mosleh, Abbas Sabbar, Solomon Ojo, Sylvester Amoah, Oluwatobi Olorunsola, Joshua M. Grant, and Seyedeh Fahimeh Banihashemian
- Subjects
Materials science ,Laser ablation ,Scanning electron microscope ,technology, industry, and agriculture ,Analytical chemistry ,02 engineering and technology ,Chemical vapor deposition ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,010309 optics ,X-ray photoelectron spectroscopy ,Plasma-enhanced chemical vapor deposition ,0103 physical sciences ,X-ray crystallography ,Thin film ,0210 nano-technology - Abstract
Silicon-tin (Si1-xSnx) films have been grown using plasma-enhanced chemical vapor deposition on Si (001) substrate. X-ray photoelectron spectroscopy characterization of the thin films show successful substitutional incorporation of Sn in Si lattice up to 3.2%. The X-ray diffraction characterizations show epitaxial growth of Si1-xSnx films (001) direction. The Sn incorporation has been measured using X-ray photoelectron spectrometry and the film uniformity was confirmed using energy dispersive X-ray spectrometry.
- Published
- 2020
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