1. Investigation of Tin(II)2,3-naphtalocyanine molecule used as near-infrared sensitive layer in organic up-conversion devices
- Author
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Alexandre Cuin, Cristiano Legnani, Rian E. Aderne, Mônica C. Melquíades, Welber G. Quirino, and Marco Cremona
- Subjects
Materials science ,Fullerene ,Absorption spectroscopy ,Organic Chemistry ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Inorganic Chemistry ,Organic semiconductor ,chemistry ,Electrical and Electronic Engineering ,Physical and Theoretical Chemistry ,Thin film ,0210 nano-technology ,Tin ,Absorption (electromagnetic radiation) ,Spectroscopy ,HOMO/LUMO - Abstract
In this work, a near infrared (NIR) sensitive molecule, Tin(II)2,3-naphthalocyanine (SnNc) was characterized by different techniques. UV–Vis spectroscopy and cyclic voltammetry were performed in order to determine the absorption spectrum, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) energies of this molecule deposited in form of thin films. We found energies of 5.0 ± 0.1 eV and 3.7 ± 0.1 eV for HOMO and LUMO, respectively. The charge carrier mobility was also investigated by space charge limit current technique showing values of μh (8.8 ± 0.1) x 10−5 cm2V−1s−1. SnNc alone or blended with fullerene was used as efficient NIR sensitive layer due to its absorption around 875 nm. The crystalline structure of SnNc was studied by X-ray powder diffraction, showing a monoclinic system and P21/c space group, with cell parameters a = (15.948 ± 6) A, b = (15.818 ± 2) A, c = (14.649 ± 1) A and β = (67.096 ± 6) A. Desorption/Ionization-Time of Flight Mass Spectrometry (LDI-TOFMS) technique was employed to obtain information of molecular structure of the SnNc in thin film, showing that the thin film of the SnNc has no dimer formation. Due to its absorption around 875 nm, SnNc blended with fullerene was used as efficient NIR sensitive layer in the fabrication of an organic up-conversion device. When the device is submitted to IR radiation, a gain of about 133% was observed in the luminous efficiency when compared to values without IR irradiation.
- Published
- 2017
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