Search

The performance of a new large rf-plasma source for large box coaters is investigated in respect to layer performance and achievable growth rates. The optical constants of SiO2 and TiO2 thin films are presented.

Transparent conductive materials such as tin doped indium oxide (ITO) are of special interest for several applications. Due to the wide band gap of around 4 eV, ITO is transparent in the visible spectral range even though it is a n-type semiconductor with free electrons in the conduction band resulting in high electrical conductivity and high reflectivity for infrared radiation [1].

The temperature stability of optical coatings becomes more and more important. Especially for telecommunication applications the requirements are very stringent. Since the number of channels of wavelengths increases and the wavelength distance between the channels decreases, it becomes more and more difficult to separate one wavelength channel from the other [1].